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  Formation Mechanism, Growth Kinetics, and Stability Limits of Graphene Adlayers in Metal-Catalyzed CVD Growth

Wang, Z., Ding, F., Eres, G., Antonietti, M., Schloegl, R., & Willinger, M. G. (2018). Formation Mechanism, Growth Kinetics, and Stability Limits of Graphene Adlayers in Metal-Catalyzed CVD Growth. Advanced Materials Interfaces, 5(14): 1800255. doi:10.1002/admi.201800255.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0001-617F-4 Version Permalink: http://hdl.handle.net/21.11116/0000-0004-57C9-8
Genre: Journal Article

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 Creators:
Wang, Zhu‐Jun, Author
Ding, Feng, Author
Eres, Gyula, Author
Antonietti, Markus1, Author              
Schloegl, Robert, Author
Willinger, Marc Georg2, Author              
Affiliations:
1Markus Antonietti, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_1863321              
2Marc Willinger, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_2364728              

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Free keywords: adlayer nucleation, catalytic chemical vapor deposition, graphene growth, in‐situ, self‐limited growth
 Abstract: A new mechanism by which catalytic chemical vapor deposition of graphene spontaneously terminates at a single layer on Pt foils is discussed. This self?limited growth regime is identified by direct imaging of adlayer graphene evolution using in?situ environmental scanning electron microscopy. Two fundamentally different mechanisms for adlayer nucleation are revealed. Besides primary nucleation, which is the standard nucleation that occurs only at the onset of growth, a secondary nucleation of adlayers is observed near full coverage of the substrate. Direct observation reveals layer?dependent growth kinetics and the establishment of a dynamic equilibrium between the forward reaction of carbon incorporation and the reverse reaction of graphene etching. Increasing coverage of the active catalyst gives rise to a spontaneous reversal of adlayer evolution from growth to etching. The growth reversal has important practical benefits. It creates a self?limited growth regime in which all adlayer graphene is removed and it enables large?scale production of 100% single?layer graphene.

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Language(s): eng - English
 Dates: 2018-05-142018
 Publication Status: Published in print
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 Rev. Method: -
 Identifiers: DOI: 10.1002/admi.201800255
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Title: Advanced Materials Interfaces
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: 5 (14) Sequence Number: 1800255 Start / End Page: - Identifier: ISSN: 2196-7350