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  Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods

Chen, W., Wen, X., Latzel, M., Yang, J., Huang, S., Shrestha, S., et al. (2017). Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods. In Proceedings of SPIE. SPIE-INT SOC OPTICAL ENGINEERING.

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 Creators:
Chen, Weijian1, Author
Wen, Xiaoming1, Author
Latzel, Michael2, 3, Author           
Yang, Jianfeng1, Author
Huang, Shujuan1, Author
Shrestha, Santosh1, Author
Patterson, Robert1, Author
Christiansen, Silke2, 4, 5, Author           
Conibeer, Gavin1, Author
Affiliations:
1external, ou_persistent22              
2Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              
3University of Erlangen-Nürnberg, Inst Opt Informat & Photon, Staudtstr 7-B2, D-91058 Erlangen, Germany, ou_persistent22              
4Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Nanoarchitectures Energy Convers, Hahn Meitner Pl 1, D-14109 Berlin, Germany, ou_persistent22              
5Free Univ Berlin, Dept Phys, Arnimallee 14, D-14195 Berlin, Germany, ou_persistent22              

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Free keywords: Ultrafast carrier dynamics; multiple quantum wells; GaN; transient absorption; nanorod
 Abstract: GaN/InGaN multiple quantum wells (MQW) is a promising material for high-efficiency solid-state lighting. Ultrafast optical pump-probe spectroscopy is an important characterization technique for examining fundamental phenomena in semiconductor nanostructure with sub-picosecond resolution. In this study, ultrafast exciton and charge carrier dynamics in GaN/InGaN MQW planar layer and nanorod are investigated using femtosecond transient absorption (TA) techniques at room temperature. Here nanorods are fabricated by etching the GaN/InGaN MQW planar layers using nanosphere lithography and reactive ion etching. Photoluminescence efficiency of the nanorods have been proved to be much higher than that of the planar layers, but the mechanism of the nanorod structure improvement of PL efficiency is not adequately studied. By comparing the TA profile of the GaN/InGaN MQW planar layers and nanorods, the impact of surface states and nanorods lateral confinement in the ultrafast carrier dynamics of GaN/InGaN MQW is revealed. The nanorod sidewall surface states have a strong influence on the InGaN quantum well carrier dynamics. The ultrafast relaxation processes studied in this GaN/InGaN MQW nanostructure is essential for further optimization of device application.

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Language(s): eng - English
 Dates: 2017
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1117/12.2283328
 Degree: -

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Title: Nanophotonics Australasia Conference
Place of Event: Melbourne, AUSTRALIA
Start-/End Date: 2017-12-10 - 2017-12-13

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Title: Proceedings of SPIE
Source Genre: Proceedings
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Publ. Info: SPIE-INT SOC OPTICAL ENGINEERING
Pages: - Volume / Issue: 10456 Sequence Number: UNSP 104565T Start / End Page: - Identifier: ISBN: 978-1-5106-1394-2
ISBN: 978-1-5106-1393-5
ISSN: 0277-786X