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  Formation Mechanism, Growth Kinetics, and Stability Limits of Graphene Adlayers in Metal‐Catalyzed CVD Growth

Wang, Z.-J., Ding, F., Eres, G., Antonietti, M., Schlögl, R., & Willinger, M. G. (2018). Formation Mechanism, Growth Kinetics, and Stability Limits of Graphene Adlayers in Metal‐Catalyzed CVD Growth. Advanced Materials Interfaces, 5(14): 1800255. doi:10.1002/admi.201800255.

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In-situ-CVD-Pt-self-limiting.pdf (Any fulltext), 919KB
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 Creators:
Wang, Zhu-Jun1, Author           
Ding, Feng2, 3, Author
Eres, Gyula4, Author
Antonietti, Markus5, Author
Schlögl, Robert1, Author           
Willinger, Marc Georg1, 5, Author           
Affiliations:
1Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              
2Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea, ou_persistent22              
3School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea, ou_persistent22              
4Materials Science and Technology Division, Oak Ridge National Laboratory Oak Ridge, TN 37831, USA, ou_persistent22              
5Department of Colloid Chemistry, Max Planck Institute of Colloids and Interfaces, Potsdam D-14424, Germany, ou_persistent22              

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 Abstract: A new mechanism by which catalytic chemical vapor deposition of graphene spontaneously terminates at a single layer on Pt foils is discussed. This self‐limited growth regime is identified by direct imaging of adlayer graphene evolution using in‐situ environmental scanning electron microscopy. Two fundamentally different mechanisms for adlayer nucleation are revealed. Besides primary nucleation, which is the standard nucleation that occurs only at the onset of growth, a secondary nucleation of adlayers is observed near full coverage of the substrate. Direct observation reveals layer‐dependent growth kinetics and the establishment of a dynamic equilibrium between the forward reaction of carbon incorporation and the reverse reaction of graphene etching. Increasing coverage of the active catalyst gives rise to a spontaneous reversal of adlayer evolution from growth to etching. The growth reversal has important practical benefits. It creates a self‐limited growth regime in which all adlayer graphene is removed and it enables large‐scale production of 100% single‐layer graphene.

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Language(s): eng - English
 Dates: 2018-04-042018-02-132018-05-14
 Publication Status: Published online
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1002/admi.201800255
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Title: Advanced Materials Interfaces
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: 7 Volume / Issue: 5 (14) Sequence Number: 1800255 Start / End Page: - Identifier: ISSN: 2196-7350
CoNE: https://pure.mpg.de/cone/journals/resource/2196-7350