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  Freestanding Silicene

Cahangirov, S., Sahin, H., Le Lay, G., & Rubio, A. (2017). Freestanding Silicene. In Lecture Notes in Physics (pp. 13-39). Basel, Switzerland: Springer International Publishing AG. doi:10.1007/978-3-319-46572-2_2.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0001-829C-C Version Permalink: http://hdl.handle.net/21.11116/0000-0001-829D-B
Genre: Book Chapter

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Cahangirov2017_Chapter_FreestandingSilicene.pdf (Publisher version), 3MB
 
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https://dx.doi.org/10.1007/978-3-319-46572-2_2 (Publisher version)
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 Creators:
Cahangirov, S.1, Author
Sahin, H.2, Author
Le Lay, G.3, Author
Rubio, A.4, 5, Author              
Affiliations:
1Univ Basque Country, Mat Unit Joint Ctr, ou_persistent22              
2 Izmir Inst Technol, Dept Photon, ou_persistent22              
3Aix Marseille Univ, CNRS, ou_persistent22              
4Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              
5Univ Basque Country, ou_persistent22              

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Free keywords: Cohesive Energy, Phonon Dispersion, Topological Insulator, Black Phosphorus, Oxygen Adatoms
 Abstract: Obtaining a freestanding 2D graphene flake is relatively easy because it has a naturally occurring 3D layered parent material, graphite, made up of graphene layers weakly bound to each other by van der Waals interaction. In fact, graphite is energetically more favorable than diamond (one the most stable and hard materials on Earth) that is the sp 3 hybridized allotrope of carbon. To prepare freestanding graphene, it is enough to come up with a smart procedure for isolating the weakly bound layers of graphite. The same is also true for other layered materials like hexagonal boron nitride, black phosphorus, metal dichalcogenides and oxides. Silicene, on the other hand, doesn’t have a naturally occurring 3D parent material since silicon atoms prefer sp 3 hybridization over sp 2 hybridization. This makes the synthesis of freestanding silicene very hard, if not impossible. However, it is possible to epitaxially grow silicene on metal substrates and make use of its intrinsic properties by transferring it to an insulating substrate (Tao et al. Nat Nanotechnol 10: 227–231, 2015). In this Chapter, we focus on intrinsic properties of freestanding silicene in the absence of the metallic substrate.

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Language(s): eng - English
 Dates: 2016-11-032017
 Publication Status: Published in print
 Pages: 27
 Publishing info: -
 Table of Contents: -
 Rev. Method: Internal
 Identifiers: DOI: 10.1007/978-3-319-46572-2_2
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Title: Lecture Notes in Physics
  Other : Introduction to the Physics of Silicene and other 2D Materials
Source Genre: Series
 Creator(s):
Cahangirov, S.1, Author
Sahin, H.2, Author
Le Lay, G.3, Author
Rubio, A.4, 5, Author            
Affiliations:
1 Univ Basque Country, Mat Unit Joint Ctr, ou_persistent22            
2 Izmir Inst Technol, Dept Photon, ou_persistent22            
3 Aix Marseille Univ, CNRS, ou_persistent22            
4 Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715            
5 Univ Basque Country, ou_persistent22            
Publ. Info: Basel, Switzerland : Springer International Publishing AG
Pages: 27 Volume / Issue: 930 Sequence Number: - Start / End Page: 13 - 39 Identifier: DOI: 10.1007/978-3-319-46572-2_2