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  Development of a LaB6 based ultra-bright cold field emitter electron source

Singh, G., Bücker, R., Kassier, G., Miller, R. J. D., & Purcell, S. T. (2017). Development of a LaB6 based ultra-bright cold field emitter electron source. doi:10.1109/IVNC.2017.8051583.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0001-97A1-E Version Permalink: https://hdl.handle.net/21.11116/0000-0002-666D-2
Genre: Proceedings

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08051583.pdf (Publisher version), 539KB
 
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https://dx.doi.org/10.1109/IVNC.2017.8051583 (Publisher version)
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 Creators:
Singh, G.1, Author           
Bücker, R.1, Author           
Kassier, G.1, Author           
Miller, R. J. D.1, Author           
Purcell, S. T.2, Author
Affiliations:
1Miller Group, Atomically Resolved Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938288              
2ILM, Université Claude Bernard Lyon 1 et CNRS, ou_persistent22              

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Free keywords: Field emission, LaB6, Tip build up, FIB
 Abstract: We present our work on the development and characterization of a practical and robust LaB6 based cold field emitter electron source. To this end we prepared a Tantalum mounted single crystal LaB6 rod that was chemically etched, yielding an apex size of 2μm. The obtained tip is loaded into a ultra high vacuum chamber for pulsed emission in the μs regime, using extraction voltage pulsing. Further processing using focused ion beam (FIB) milling, and conditioning using a build-up technique will be used to reduce the apex size to the nm range.

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Language(s): eng - English
 Dates: 20172017
 Publication Status: Issued
 Pages: -
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 Rev. Type: Internal
 Identifiers: DOI: 10.1109/IVNC.2017.8051583
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Title: 30th International Vacuum Nanoelectronics Conference (IVNC) 2017
Place of Event: Regensburg, Germany
Start-/End Date: 2017-07-10 - 2017-07-14

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Project name : The a uthors thankful to the International Max Planck Research School (IMPRS), Centre of Free Electron Laser (CFEL) and Hamburg Centre for Ultrafast Imaging (CUI) who is funding this work.
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Title: 2017 30th International Vacuum Nanoelectronics Conference (IVNC)
Source Genre: Proceedings
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Publ. Info: NEW YORK, NY 10017 USA : IEEE
Pages: 2 Volume / Issue: - Sequence Number: - Start / End Page: 144 - 145 Identifier: Other: Electronic ISSN: 2380-6311
Other: INSPEC Accession Number: 17213661
ISBN: 978-1-5090-3975-3

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Title: International Vacuum Nanoelectronics Conference
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Publ. Info: NEW YORK, NY 10017 USA : IEEE
Pages: nfi Volume / Issue: - Sequence Number: - Start / End Page: 1 - 2 Identifier: -