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  All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Rashidi, M., Vine, W., Burgess, J. A. J., Taucer, M., Achal, R., Pitters, J. L., et al. (2018). All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics. Journal of Visualized Experiments, 131: e56861. doi:10.3791/56861.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0001-A752-6 Version Permalink: http://hdl.handle.net/21.11116/0000-0002-502E-1
Genre: Journal Article

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1706.08906.pdf (Preprint), 966KB
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2017
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https://dx.doi.org/10.3791/56861 (Publisher version)
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https://arxiv.org/abs/1706.08906 (Preprint)
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 Creators:
Rashidi, M.1, 2, Author
Vine, W.1, Author
Burgess, J. A. J.3, 4, 5, Author              
Taucer, M.1, 2, 6, Author
Achal, R.1, Author
Pitters, J. L.2, Author
Loth, S.3, 4, Author              
Wolkow, R. A.1, 2, Author
Affiliations:
1Department of Physics, University of Alberta, ou_persistent22              
2National Institute for Nanotechnology, National Research Council of Canada, Edmonton, ou_persistent22              
3Dynamics of Nanoelectronic Systems, Independent Research Groups, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938290              
4Max Planck Institute for Solid State Research, ou_persistent22              
5Department of Physics and Astronomy, University of Manitoba, ou_persistent22              
6Joint Attosecond Science Laboratory, University of Ottawa, ou_persistent22              

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 Abstract: The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution, which motivates the use of scanning tunneling microscopy (STM). However, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming, including all-electronic time-resolved STM, which is used in this study to examine dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics.

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Language(s): eng - English
 Dates: 2018-01
 Publication Status: Published online
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.3791/56861
arXiv: 1706.08906
 Degree: -

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Title: Journal of Visualized Experiments
  Other : Journal of Visualized Experiments: JoVE
  Abbreviation : J. Vis. Exp.
Source Genre: Journal
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Publ. Info: Rockville Pike, Bethesda MD : JoVE
Pages: - Volume / Issue: 131 Sequence Number: e56861 Start / End Page: - Identifier: ISSN: 1940-087X
CoNE: /journals/resource/1940087X