English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Attosecond optical-field-enhanced carrier injection into the GaAs conduction band

Schlaepfer, F., Lucchini, M., Sato, S., Volkov, M., Kasmi, L., Hartmann, N., et al. (2018). Attosecond optical-field-enhanced carrier injection into the GaAs conduction band. Nature Physics, 14(6), 560-564. doi:10.1038/s41567-018-0069-0.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/21.11116/0000-0001-A7B2-9 Version Permalink: http://hdl.handle.net/21.11116/0000-0001-B4A4-A
Genre: Journal Article

Files

show Files
hide Files
:
s41567-018-0069-0.pdf (Publisher version), 3MB
 
File Permalink:
-
Name:
s41567-018-0069-0.pdf
Description:
-
Visibility:
Private
MIME-Type / Checksum:
application/pdf
Technical Metadata:
Copyright Date:
-
Copyright Info:
-
License:
-

Locators

show
hide
Locator:
https://dx.doi.org/10.1038/s41567-018-0069-0 (Publisher version)
Description:
-

Creators

show
hide
 Creators:
Schlaepfer, F.1, Author
Lucchini, M.1, Author
Sato, S.2, Author              
Volkov, M.1, Author
Kasmi, L.1, Author
Hartmann, N.1, Author
Rubio, A.2, Author              
Gallmann, L.1, Author
Keller, U.1, Author
Affiliations:
1Department of Physics, ETH Zurich, ou_persistent22              
2Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              

Content

show
hide
Free keywords: -
 Abstract: Resolving the fundamental carrier dynamics induced in solids by strong electric fields is essential for future applications, ranging from nanoscale transistors1,2 to high-speed electro-optical switches3. How fast and at what rate can electrons be injected into the conduction band of a solid? Here, we investigate the sub-femtosecond response of GaAs induced by resonant intense near-infrared laser pulses using attosecond transient absorption spectroscopy. In particular, we unravel the distinct role of intra- versus interband transitions. Surprisingly, we found that despite the resonant driving laser, the optical response during the light–matter interaction is dominated by intraband motion. Furthermore, we observed that the coupling between the two mechanisms results in a significant enhancement of the carrier injection from the valence into the conduction band. This is especially unexpected as the intraband mechanism itself can accelerate carriers only within the same band. This physical phenomenon could be used to control ultrafast carrier excitation and boost injection rates in electronic switches in the petahertz regime.

Details

show
hide
Language(s): eng - English
 Dates: 2017-08-142018-02-012018-03-122018-06
 Publication Status: Published in print
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1038/s41567-018-0069-0
 Degree: -

Event

show

Legal Case

show

Project information

show hide
Project name : We thank M. C. Golling for growing the GaAs, and J. Leuthold and C. Bolognesi for helpful discussion. The authors acknowledge the support of the technology and cleanroom facility at Frontiers in Research: Space and Time (FIRST) of ETH Zurich for advanced micro- and nanotechnology. This work was supported by the National Center of Competence in Research Molecular Ultrafast Science and Technology (NCCR MUST) funded by the Swiss National Science Foundation, and by JSPS KAKENHI grant no. 26-1511.
Grant ID : -
Funding program : -
Funding organization : -

Source 1

show
hide
Title: Nature Physics
  Other : Nat. Phys.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: London : Nature Pub. Group
Pages: - Volume / Issue: 14 (6) Sequence Number: - Start / End Page: 560 - 564 Identifier: ISSN: 1745-2473
CoNE: /journals/resource/1000000000025850