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Abstract:
A simple method for high resolution (<100nm) lithography is reported. We use electrons with energies ranging from 100–300eV emitted by tungsten field emission tips for proximity printing of stencil masks. A comparison with other parallel fine line techniques, like proximity printing and projection lithography with x-rays, high energy electrons or ions, reveals the specific advantages and restrictions of our method.
The masks are made of ≈ 100nm thick silicon membranes structured by e-beam lithography and reactive ion etching (RIE). Free standing gratings with periods down to 100nm serve as test patterns for proximity printing with gaps of ≈15μm. due to the short penetration depth of the low energy electrons, ultrathin resist systems are needed. We have chosen self-assembled monolayers (SAMs) of hexadecane thiol on gold. The monolayer resist is degraded by the exposure, the structures can be transferred by wet chemical etching. Periodic gold structures below 100nm lines and spaces have been generated this way. It was found, that the SAM resist of hexadecane thiol can be used as a positive or negative tone resist depending on the exposure dose.
