English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120)

Pristovsek, M., Han, Y., Zhu, T., Oehler, F., Tang, F., Oliver, R. A., et al. (2016). Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120). Semiconductor Science and Technology, 31(8): 085007. doi:10.1088/0268-1242/31/8/085007.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/21.11116/0000-0001-B599-6 Version Permalink: http://hdl.handle.net/21.11116/0000-0001-B59B-4
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Pristovsek, Markus1, Author              
Han, Yisong1, Author              
Zhu, Tongtong1, Author              
Oehler, Fabrice1, Author              
Tang, Fengzai1, Author              
Oliver, Rachel A.2, Author              
Humphreys, Colin J.3, Author              
Tytko, Darius4, Author              
Choi, Pyuck-Pa4, Author              
Raabe, Dierk5, Author              
Brunner, Frank6, Author              
Weyers, Markus6, Author              
Affiliations:
1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, UK, persistent22              
2Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK, ou_persistent22              
3Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, UK, ou_persistent22              
4Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384              
5Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863381              
6Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin, Germany, persistent22              

Content

show
hide
Free keywords: High resolution transmission electron microscopy; Probes; Semiconductor quantum wells; Transmission electron microscopy, Atom probe tomography; Frequency distributions; InGaN; InGaN quantum wells; semi-polar; Step bunching; Structural and optical properties; Structural qualities, Optical properties
 Abstract: We benchmarked growth, microstructure and photo luminescence (PL) of (112-2) InGaN quantum wells (QWs) against (0001) and (112-0). In incorporation, growth rate and the critical thickness of (112-2) QWs are slightly lower than (0001) QWs, while the In incorporation on (112-0) is reduced by a factor of three. A small step-bunching causes slight fluctuations of the emission wavelength. Transmission electron microscopy as well as atom probe tomography (APT) found very flat interfaces with little In segregation even for 20 In content. APT frequency distribution analysis revealed some deviation from a random InGaN alloy, but not as severe as for (112-0). The slight deviation of (112-2) QWs from an ideal random alloy did not broaden the 300 K PL, the line widths were similar for (112-2) and (0001) while (112-0) QWs were broader. Despite the high structural quality and narrow PL, the integrated PL signal at 300 K was about 4 lower on (112-2) and more than 10 lower on (112-0). © 2016 IOP Publishing Ltd.

Details

show
hide
Language(s): eng - English
 Dates: 2016-07-12
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1088/0268-1242/31/8/085007
BibTex Citekey: Pristovsek2016
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Semiconductor Science and Technology
  Other : Semicond. Sci. Technol.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: London? : IOP Pub.
Pages: - Volume / Issue: 31 (8) Sequence Number: 085007 Start / End Page: - Identifier: ISSN: 0268-1242
CoNE: /journals/resource/954925500147