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  Interface engineering and nanoscale characterization of Zn(S,O) alternative buffer layer for CIGS thin film solar cells

Soni, P. U., Cojocaru-Mirédin, O., & Raabe, D. (2015). Interface engineering and nanoscale characterization of Zn(S,O) alternative buffer layer for CIGS thin film solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Piscataway Township, NJ, USA: Institute of Electrical and Electronics Engineers Inc.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0001-BADE-4 Version Permalink: http://hdl.handle.net/21.11116/0000-0001-BBA4-3
Genre: Conference Paper

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 Creators:
Soni, Purvesh Upendrakumar1, Author              
Cojocaru-Mirédin, Oana1, Author              
Raabe, Dierk2, Author              
Affiliations:
1Interface Design in Solar Cells, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863387              
2Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863381              

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Free keywords: Atoms; Buffer layers; Cell engineering; Deposition; Gallium; Interfaces (materials); Magnetron sputtering; Nanotechnology; Optical properties; Optical waveguides; Photoelectrons; Photons; Probes; Solar cells; Thin film solar cells; Zinc, Alternative buffer layers; Atom probe tomography; Chemical characterization; Chemical fluctuations; CIGS; Nanoscale characterization; Postdeposition heat treatment; rf-Magnetron sputtering, X ray photoelectron spectroscopy
 Abstract: The buffer layers in Cu(In,Ga)Se2 solar cells play a crucial role in device performance, although their thickness is only a few tens of nanometers. Moreover, often Zn(S,O) alternative buffer layers have been studied in view of their structure, band alignment, and optical properties, but not much work exists on their nanoscale chemical properties. This work focuses on the chemical characterization of Zn(S,O) using x-ray photoelectron spectroscopy for determination of the Zn(S,O) and Cu(In,Ga)Se2 depth composition, and atom probe tomography for probing the nano-scale chemical fluctuations at the Zn(S,O)/Cu(In,Ga)Se2 interface. The Zn(O,S) buffer layer was deposited by RF magnetron sputtering. The aim is to study the nanoscale concentration changes and atomic interdiffusion between CIGS and Zn(S,O) after sputter deposition at room temperature and after post-deposition heat treatment at 200°C. © 2015 IEEE.

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Language(s): eng - English
 Dates: 2015-12-14
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1109/PVSC.2015.7355889
BibTex Citekey: Soni2015
ISBN: 978-147997944-8
 Degree: -

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Title: 42nd Photovoltaic Specialist Conference, PVSC 2015, Category numberCFP15PSC-ART; Code 118514
Place of Event: New Orleans, LA, USA
Start-/End Date: 2015-06-14 - 2015-06-19

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Title: 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Source Genre: Proceedings
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Publ. Info: Piscataway Township, NJ, USA : Institute of Electrical and Electronics Engineers Inc.
Pages: - Volume / Issue: - Sequence Number: 7355889 Start / End Page: - Identifier: -