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  Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of nanowires

Lymperakis, L., Weidlich, P. H., Eisele, H., Schnedler, M., Nys, J. P., Grandidier, B., et al. (2013). Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of nanowires. Applied Physics Letters, 103(15): 152101. doi:10.1063/1.4823723.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0001-D537-1 Version Permalink: http://hdl.handle.net/21.11116/0000-0001-D538-0
Genre: Journal Article

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 Creators:
Lymperakis, Liverios1, Author              
Weidlich, P. H.2, Author              
Eisele, Holger3, Author              
Schnedler, M.2, Author              
Nys, Jean Philippe4, Author              
Grandidier, Bruno4, Author              
Stiévenard, Didier4, Author              
Dunin-Borkowski, Rafal E.2, Author              
Neugebauer, Jörg5, Author              
Ebert, Philipp2, Author              
Affiliations:
1Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
2Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany, persistent22              
3Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany, persistent22              
4Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France, persistent22              
5Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              

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Free keywords: Bulk conduction bands; GaN nanowires; Intrinsic pinning; K points; Low density; Non-polar GaN, Electronic structure; Nanowires; Scanning tunneling microscopy; Surface states, Gallium nitride
 Abstract: We investigate the electronic structure of the GaN (10 1 ̄ 0) prototype surface for GaN nanowire sidewalls. We find a paradoxical situation that a surface state at all k points in the bandgap cannot be probed by conventional scanning tunneling microscopy, due to a dispersion characterized by a steep minimum with low density of states (DOS) and an extremely flat maximum with high DOS. Based on an analysis of the decay behavior into the vacuum, we identify experimentally the surface state minimum 0.6 ± 0.2 eV below the bulk conduction band in the gap. Hence, GaN nanowires with clean (10 1 ̄ 0) sidewall facets are intrinsically pinned. © 2013 AIP Publishing LLC.

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Language(s): eng - English
 Dates: 2013-10-07
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1063/1.4823723
BibTex Citekey: Lymperakis2013
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 103 (15) Sequence Number: 152101 Start / End Page: - Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223