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  Atomic scale morphology, growth behaviour and electronic properties of semipolar {101̄3} GaN surfaces

Kioseoglou, J., Kalesaki, E., Lymperakis, L., Karakostas, T. H., & Komninou, P. (2013). Atomic scale morphology, growth behaviour and electronic properties of semipolar {101̄3} GaN surfaces. Journal of Physics: Condensed Matter, 25(4): 045008. doi:10.1088/0953-8984/25/4/045008.

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 Creators:
Kioseoglou, Joseph1, Author           
Kalesaki, Efterpi1, Author           
Lymperakis, Liverios1, 2, Author           
Karakostas, Th. H.1, Author           
Komninou, Ph.1, Author           
Affiliations:
1Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece, persistent22              
2Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              

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Free keywords: Adlayers; Atomic scale; Bi-layer; Cleaved surfaces; First-principles calculation; Ga-rich conditions; GaN layers; Growth behaviour; Metallic structures; Morphological stability; Semipolar, Calculations; Gallium nitride; Semiconductor growth; Stoichiometry; Surfaces, Electronic properties, gallium; gallium nitride; metal; nitrogen, article; chemistry; conformation; electronics; genetic procedures; kinetics; methodology; physics; semiconductor; surface property; thermodynamics, Biosensing Techniques; Electronics; Gallium; Kinetics; Metals; Molecular Conformation; Nitrogen; Physics; Semiconductors; Surface Properties; Thermodynamics
 Abstract: First-principles calculations relating to the atomic structure and electronic properties of 101̄3 GaN surfaces reveal significant differentiations between the two polarity orientations. The (101̄3) surface exhibits a remarkable morphological stability, stabilizing a metallic structure (Ga adlayer) over the entire range of the Ga chemical potential. In contrast, the semiconducting, cleaved surface is favoured on (1013) under extremely and moderately N-rich conditions, a Ga bilayer is stabilized under corresponding Ga-rich conditions and various transitions between metallic reconstructions take place in intermediate growth stoichiometries. Efficient growth schemes for smooth, two-dimensional GaN layers and the isolation of f10N13g material from parasitic orientations are identified. © 2013 IOP Publishing Ltd.

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Language(s): eng - English
 Dates: 2013-01-30
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1088/0953-8984/25/4/045008
BibTex Citekey: Kioseoglou2013
 Degree: -

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Title: Journal of Physics: Condensed Matter
Source Genre: Journal
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Publ. Info: Bristol : IOP Publishing
Pages: - Volume / Issue: 25 (4) Sequence Number: 045008 Start / End Page: - Identifier: ISSN: 0953-8984
CoNE: https://pure.mpg.de/cone/journals/resource/954928562478