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  Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast

Mehrtens, T., Schowalter, M., Tytko, D., Choi, P.-P., Raabe, D., Hoffmann, L., et al. (2013). Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast. In Journal of Physics: Conference Series.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0001-E398-3 Version Permalink: http://hdl.handle.net/21.11116/0000-0001-E399-2
Genre: Conference Paper

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 Creators:
Mehrtens, Thorsten1, Author              
Schowalter, Marco1, Author              
Tytko, Darius2, Author              
Choi, Pyuck-Pa2, Author              
Raabe, Dierk3, Author              
Hoffmann, Lars4, Author              
Jönen, Holger4, Author              
Rossow, Uwe4, Author              
Hangleiter, Andreas4, Author              
Rosenauer, Andreas1, Author              
Affiliations:
1Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, Bremen, Germany, ou_persistent22              
2Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384              
3Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863381              
4Institute of Applied Physics, TU Braunschweig, 38106 Braunschweig, Germany, persistent22              

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Free keywords: High resolution transmission electron microscopy; Indium; Scanning electron microscopy; Temperature distribution; Transmission electron microscopy, Atom probe tomography; High-angle annular dark fields; Indium concentration; Lattice approximations; Multi quantum well structures; Specimen temperature; Specimen thickness; Temperature dependence, Semiconductor quantum wells
 Abstract: In this contribution, the indium concentration profile of an In xGa1-xN/GaN five-fold multi quantum well structure is measured from high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images. The results are compared with an atom probe tomography study. Indium concentrations in the range of 26 at. to 33 at. are measured in the centre of the quantum wells. An additional indium layer of 14 at. has been found on top of the quantum wells. In the second part, the temperature dependence of measured intensities in GaN is investigated. Here, multislice calculations in the frozen lattice approximation are carried out in dependence of specimen thickness and compared to experimental data. An increase of intensity with specimen temperature is found.

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Language(s): eng - English
 Dates: 2013
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.1088/1742-6596/471/1/012009
BibTex Citekey: Mehrtens2013
ISSN: 1742-6588
 Degree: -

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Title: 18th Microscopy of Semiconducting Materials Conference, MSM 2013
Place of Event: Oxford, UK
Start-/End Date: 2013-04-07 - 2013-04-11

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Title: Journal of Physics: Conference Series
Source Genre: Proceedings
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Pages: - Volume / Issue: 471 (1) Sequence Number: 012009 Start / End Page: - Identifier: -