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  Ab initio guided low temperature synthesis strategy for smooth face–centred cubic FeMn thin films

Herrig, F., Mušić, D., Völker, B., Hans, M., Pöllmann, P. J., Ravensburg, A. L., et al. (2018). Ab initio guided low temperature synthesis strategy for smooth face–centred cubic FeMn thin films. Metals, 8(6): 384. doi:10.3390/met8060384.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0001-E752-E Version Permalink: http://hdl.handle.net/21.11116/0000-0001-E755-B
Genre: Journal Article

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 Creators:
Herrig, Friederike1, Author              
Mušić, Denis2, Author              
Völker, Bernhard2, 3, Author              
Hans, Marcus4, Author              
Pöllmann, Peter J.1, Author              
Ravensburg, Anna L.1, Author              
Schneider, Jochen Michael5, Author              
Affiliations:
1Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, Aachen, Germany, persistent22              
2Materials Chemistry, RWTH Aachen University, Aachen, Germany, ou_persistent22              
3Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863398              
4Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, Aachen, Germany, ou_persistent22              
5Materials Chemistry, Lehrstuhl für Werkstoffchemie, RWTH Aachen, Germany, ou_persistent22              

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 Abstract: The sputter deposition of FeMn thin films with thicknesses in the range of hundred nanometres and beyond requires relatively high growth temperatures for the formation of the face-centred cubic (fcc) phase, which results in high thin film roughness. A low temperature synthesis strategy, based on local epitaxial growth of a 100 nm thick fcc FeMn film as well as a Cu nucleation layer on an α-Al2O3 substrate at 160◦C, enables roughness values (Ra) as low as ~0.6 nm, which is in the same order of magnitude as the pristine substrate (~0.1 nm). The synthesis strategy is guided by ab initio calculations, indicating very strong interfacial bonding of the Cu nucleation layer to an α-Al2O3 substrate (work of separation 5.48 J/m2)—which can be understood based on the high Cu coordination at the interface—and between fcc FeMn and Cu (3.45 J/m2). Accompanied by small lattice misfits between these structures, the strong interfacial bonding is proposed to enable the local epitaxial growth of a smooth fcc FeMn thin film. Based on the here introduced synthesis strategy, the implementation of fcc FeMn based thin film model systems for materials with interface dominated properties such as FeMn steels containing κ-carbide precipitates or secondary phases appears meaningful. © 2018 by the authors. Licensee MDPI, Basel, Switzerland.

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Language(s): eng - English
 Dates: 2018-06
 Publication Status: Published in print
 Pages: -
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 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.3390/met8060384
BibTex Citekey: Herrig2018
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Title: Metals
Source Genre: Journal
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Publ. Info: Basel : MDPI AG
Pages: - Volume / Issue: 8 (6) Sequence Number: 384 Start / End Page: - Identifier: Other: 2075-4701
CoNE: /journals/resource/metals