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  Effect of interface reaction and diffusion on stress-oxidation coupling at high temperature

Yue, M., Dong, X., Fang, X., & Feng, X. (2018). Effect of interface reaction and diffusion on stress-oxidation coupling at high temperature. Journal of Applied Physics, 123(15): 155301. doi:10.1063/1.5025149.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0001-E6D4-C Version Permalink: http://hdl.handle.net/21.11116/0000-0001-E6D5-B
Genre: Journal Article

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 Creators:
Yue, Mengkun1, 2, Author              
Dong, Xuelin3, Author              
Fang, Xufei4, Author              
Feng, Xue5, 6, Author              
Affiliations:
1AML, Department of Engineering Mechanics, Tsinghua University, Beijing, China, persistent22              
2Interdisciplinary Research Center for Flexible Electronics Technology, Tsinghua University, Beijing, China, persistent22              
3Key Laboratory of Petroleum Engineering, China University of Petroleum, Beijing, China, persistent22              
4Nanotribology, Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863402              
5AML, School of Aerospace Engineering, Tsinghua University, Beijing, China, persistent22              
6Center for Advanced Mechanics and Materials, Tsinghua University, Beijing, China, persistent22              

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Free keywords: Film growth; Oxide films; Silica, Diffusion process; Governing equations; Interface reactions; Isothermal oxidations; Material degradation; Oxidation kinetics; Oxidation process; Stress equilibrium, Oxidation
 Abstract: Higherature structural materials undergo oxidation during the service, and stress would generate in the oxide film. Understanding the coupling effect between stress and oxidation contributes to the understanding of material degradation and failure during the oxidation process. Here, we propose a model to investigative the coupling effect of stress and oxidation at high temperature by considering the three-stage oxidation process, where both the interface reaction and the diffusion process are present. The governing equations including the oxidation kinetics and stress equilibrium for isothermal oxidation under stress-oxidation coupling effect have been derived. The theory is validated by comparing with the experimental results of SiO2 grown on Si substrate. Results show that the coupling of stress and oxidation influences the growth of the oxide film by affecting all three stages of the oxidation process. © 2018 Author(s).

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Language(s): eng - English
 Dates: 2018-04-21
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1063/1.5025149
BibTex Citekey: Yue2018
 Degree: -

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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: - Volume / Issue: 123 (15) Sequence Number: 155301 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: /journals/resource/991042723401880