ausblenden:
Schlagwörter:
Film growth; Oxide films; Silica, Diffusion process; Governing equations; Interface reactions; Isothermal oxidations; Material degradation; Oxidation kinetics; Oxidation process; Stress equilibrium, Oxidation
Zusammenfassung:
Higherature structural materials undergo oxidation during the service, and stress would generate in the oxide film. Understanding the coupling effect between stress and oxidation contributes to the understanding of material degradation and failure during the oxidation process. Here, we propose a model to investigative the coupling effect of stress and oxidation at high temperature by considering the three-stage oxidation process, where both the interface reaction and the diffusion process are present. The governing equations including the oxidation kinetics and stress equilibrium for isothermal oxidation under stress-oxidation coupling effect have been derived. The theory is validated by comparing with the experimental results of SiO2 grown on Si substrate. Results show that the coupling of stress and oxidation influences the growth of the oxide film by affecting all three stages of the oxidation process. © 2018 Author(s).
