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  Pressure effects on the electronic properties of the undoped superconductor ThFeAsN

Barbero, N., Holenstein, S., Shang, T., Shermadini, Z. G., Lochner, F., Eremin, I. M., et al. (2018). Pressure effects on the electronic properties of the undoped superconductor ThFeAsN. Physical Review B, 97(14): 140506. doi:10.1103/PhysRevB.97.140506.

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Datensatz-Permalink: http://hdl.handle.net/21.11116/0000-0001-E823-2 Versions-Permalink: http://hdl.handle.net/21.11116/0000-0001-E824-1
Genre: Zeitschriftenartikel

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 Urheber:
Barbero, Nicolò1, Autor              
Holenstein, Stefan2, 3, Autor              
Shang, Tingting2, 4, Autor              
Shermadini, Zurab G.2, Autor              
Lochner, Felix5, 6, Autor              
Eremin, Il'Ya M.6, Autor              
Wang, Cao7, Autor              
Cao, Guanghan8, 9, Autor              
Khasanov, Rustem2, Autor              
Ott, Hans Rudolf1, 2, Autor              
Mesot, Joël1, 2, Autor              
Shiroka, Toni1, 2, Autor              
Affiliations:
1Laboratorium für Festkörperphysik, ETH Zürich, Zurich, Switzerland, persistent22              
2Paul Scherrer Institut, Villigen PSI, Switzerland, persistent22              
3Physik-Institut der Universität Zürich, Wintherturerstrasse 190, Zürich, Switzerland, persistent22              
4Institute of Condensed Matter Physics, EPFL Lausanne, Lausanne, Switzerland, persistent22              
5Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863341              
6Institut für Theoretische Physic III, Ruhr-Universität Bochum, D-44801 Bochum, Germany, persistent22              
7Department of Physics, Shandong University of Technology, Zibo, China, persistent22              
8Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, China, persistent22              
9Collaborative Innovation Center of Advanced Microstructures, Nanjing, China, persistent22              

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 Zusammenfassung: The recently synthesized ThFeAsN iron pnictide superconductor exhibits a Tc of 30 K, the highest of the 1111-type series in the absence of chemical doping. To understand how pressure affects its electronic properties, we carried out microscopic investigations up to 3 GPa via magnetization, nuclear magnetic resonance, and muon-spin rotation experiments. The temperature dependence of the As75 Knight shift, the spin-lattice relaxation rates, and the magnetic penetration depth suggest a multiband s±-wave gap symmetry in the dirty limit, whereas the gap-to-Tc ratio Δ/kBTc hints at a strong-coupling scenario. Pressure modulates the geometrical parameters, thus reducing Tc as well as Tm, the temperature where magnetic-relaxation rates are maximized, both at the same rate of approximately -1.1K/GPa. This decrease in Tc with pressure is consistent with band-structure calculations, which relate it to the deformation of the Fe 3dz2 orbitals. © 2018 American Physical Society.

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Sprache(n): eng - Englisch
 Datum: 2018-04-13
 Publikationsstatus: Im Druck veröffentlicht
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: DOI: 10.1103/PhysRevB.97.140506
BibTex Citekey: Barbero2018
 Art des Abschluß: -

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Titel: Physical Review B
  Kurztitel : Phys. Rev. B
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: Woodbury, NY : American Physical Society
Seiten: - Band / Heft: 97 (14) Artikelnummer: 140506 Start- / Endseite: - Identifikator: ISSN: 1098-0121
CoNE: /journals/resource/954925225008