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  Ultrafast Doublon Dynamics in Photoexcited 1T-TaS2

Ligges, M., Avigo, I., Golež, D., Strand, H., Beyazit, Y., Hanff, K., et al. (2018). Ultrafast Doublon Dynamics in Photoexcited 1T-TaS2. Physical Review Letters, 120(16): 166401. doi:10.1103/PhysRevLett.120.166401.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0002-1514-0 Version Permalink: http://hdl.handle.net/21.11116/0000-0003-55EB-5
Genre: Journal Article

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 Creators:
Ligges, M.1, Author
Avigo, I.1, Author
Golež, D.2, Author
Strand, H. U. R.2, Author
Beyazit, Y.1, Author
Hanff, K.3, Author
Diekmann, F.3, Author
Stojchevska, L.1, Author
Kalläne, M.3, Author
Zhou, P.1, Author
Rossnagel, K.3, Author
Eckstein, M.4, 5, Author              
Werner, P.2, Author
Bovensiepen, U.1, Author
Affiliations:
1Faculty of Physics, University of Duisburg-Essen, ou_persistent22              
2Department of Physics, University of Fribourg, ou_persistent22              
3Institute of Experimental and Applied Physics, University of Kiel, ou_persistent22              
4Theory of Correlated Systems out of Equilibrium, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938296              
5University of Hamburg-CFEL, ou_persistent22              

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 Abstract: Strongly correlated materials exhibit intriguing properties caused by intertwined microscopic interactions that are hard to disentangle in equilibrium. Employing nonequilibrium time-resolved photoemission spectroscopy on the quasi-two-dimensional transition-metal dichalcogenide 1T-TaS2, we identify a spectroscopic signature of doubly occupied sites (doublons) that reflects fundamental Mott physics. Doublon-hole recombination is estimated to occur on timescales of electronic hopping ℏ/J≈14  fs. Despite strong electron-phonon coupling, the dynamics can be explained by purely electronic effects captured by the single-band Hubbard model under the assumption of weak hole doping, in agreement with our static sample characterization. This sensitive interplay of static doping and vicinity to the metal-insulator transition suggests a way to modify doublon relaxation on the few-femtosecond timescale.

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Language(s): eng - English
 Dates: 2017-12-282017-02-142018-04-182018-04-18
 Publication Status: Published in print
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 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1103/PhysRevLett.120.166401
arXiv: 1702.05300v2
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Title: Physical Review Letters
  Abbreviation : Phys. Rev. Lett.
Source Genre: Journal
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Publ. Info: Woodbury, N.Y. : American Physical Society
Pages: - Volume / Issue: 120 (16) Sequence Number: 166401 Start / End Page: - Identifier: ISSN: 0031-9007
CoNE: /journals/resource/954925433406_1