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  Can surface reactivity of mixed crystals be predicted from their counterparts? A case study of (Bi1−xSbx)2Te3 topological insulators

Volykhov, A. A., Sánchez-Barriga, J., Batuk, M., Callaert, C., Hadermann, J., Sirotina, A. P., et al. (2018). Can surface reactivity of mixed crystals be predicted from their counterparts? A case study of (Bi1−xSbx)2Te3 topological insulators. Journal of Materials Chemistry C, 6(33), 8941-8949. doi:10.1039/C8TC02235F.

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Volykhov, Andrey A.1, 2, Autor
Sánchez-Barriga, Jaime3, Autor
Batuk, Maria4, Autor
Callaert, Carolien4, Autor
Hadermann, Joke4, Autor
Sirotina, Anna P.1, 5, Autor
Neudachina, Vera S.1, Autor
Belova, Alina I.1, Autor
Vladimirova, Nadezhda V.1, Autor
Tamm, Marina E.1, Autor
Khmelevsky, Nikolay O.6, Autor
Escudero, Carlos7, Autor
Pérez-Dieste, Virginia7, Autor
Knop-Gericke, Axel8, Autor           
Yashina, Lada V.1, Autor
Affiliations:
1Lomonosov Moscow State University , Leninskie Gory 1/3, 119991 Moscow, Russia, ou_persistent22              
2Institute of General and Inorganic Chemistry RAS, Leninsky Avenue 31, 119991 Moscow, Russia, ou_persistent22              
3Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, 12489 Berlin, Germany, ou_persistent22              
4EMAT, Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium, ou_persistent22              
5Institute of Nanotechnology of Microelectronics RAS, Nagatinskaya str., 16A/11, 115487 Moscow, Russia, ou_persistent22              
6Moscow State University of Technology “STANKIN”, Vadkovsky side-street 1, 127994 Moscow, Russia, ou_persistent22              
7ALBA Synchrotron Light Source, Carrer de la Llum 2-26, 08290 Cerdanyola del Vallès, Barcelona, Spain, ou_persistent22              
8Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              

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 Zusammenfassung: The behavior of ternary mixed crystals or solid solutions and its correlation with the properties of their binary constituents is of fundamental interest. Due to their unique potential for application in future information technology, mixed crystals of topological insulators with the spin-locked, gapless states on their surfaces attract huge attention of physicists, chemists and material scientists. (Bi1−xSbx)2Te3 solid solutions are among the best candidates for spintronic applications since the bulk carrier concentration can be tuned by varying x to obtain truly bulk-insulating samples, where the topological surface states largely contribute to the transport and the realization of the surface quantum Hall effect. As this ternary compound will be evidently used in the form of thin-film devices its chemical stability is an important practical issue. Based on the atomic resolution HAADF-TEM and EDX data together with the XPS results obtained both ex situ and in situ, we propose an atomistic picture of the mixed crystal reactivity compared to that of its binary constituents. We find that the surface reactivity is determined by the probability of oxygen attack on the Te–Sb bonds, which is directly proportional to the number of Te atoms bonded to at least one Sb atom. The oxidation mechanism includes formation of an amorphous antimony oxide at the very surface due to Sb diffusion from the first two quintuple layers, electron tunneling from the Fermi level of the crystal to oxygen, oxygen ion diffusion to the crystal, and finally, slow Te oxidation to the +4 oxidation state. The oxide layer thickness is limited by the electron transport, and the overall process resembles the Cabrera–Mott mechanism in metals. These observations are critical not only for current understanding of the chemical reactivity of complex crystals, but also to improve the performance of future spintronic devices based on topological materials.

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Sprache(n): eng - English
 Datum: 2018-05-092018-07-202018-07-202018-09-07
 Publikationsstatus: Erschienen
 Seiten: 9
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: DOI: 10.1039/C8TC02235F
 Art des Abschluß: -

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Titel: Journal of Materials Chemistry C
  Andere : Journal of Materials Chemistry C: Materials for Optical and Electronic Devices
  Kurztitel : J. Mater. Chem. C
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: London, UK : Royal Society of Chemistry
Seiten: 9 Band / Heft: 6 (33) Artikelnummer: - Start- / Endseite: 8941 - 8949 Identifikator: ISSN: 2050-7526
CoNE: https://pure.mpg.de/cone/journals/resource/2050-7526