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  Influence of rhombohedral stacking order in the electrical resistance of bulk and mesoscopic graphite

Zoraghi, M., Barzola-Quiquia, J., Stiller, M., Setzer, A., Esquinazi, P., Kloess, G. H., et al. (2017). Influence of rhombohedral stacking order in the electrical resistance of bulk and mesoscopic graphite. Physical Review B, 95(4): 045308. doi:10.1103/PhysRevB.95.045308.

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Zoraghi, Mahsa1, Author              
Barzola-Quiquia, J.1, Author
Stiller, M.1, Author
Setzer, A.1, Author
Esquinazi, P.1, Author
Kloess, G. H. 1, Author
Muenster, T.1, Author
Lühmann, T.1, Author
Estrela-Lopis, I., Author
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1External Organizations, ou_persistent22              

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 Abstract: The electrical, in-plane resistance as a function of temperature R(T) of bulk and mesoscopic thin graphite flakes obtained from the same batch was investigated. Samples thicker than ∼30 nm show metalliclike contribution in a temperature range that increases with the sample thickness, whereas a semiconductinglike behavior was observed for thinner samples. The temperature dependence of the in-plane resistance of all measured samples and several others from literature can be very well explained between 2 and 1100 K assuming three contributions in parallel: a metalliclike conducting path at the interfaces between crystalline regions, composed of two semiconducting phases, i.e., Bernal and rhombohedral stacking. From the fits of R(T) we obtain a semiconducting energy gap of 110±20 meV for the rhombohedral and 38±8 meV for the Bernal phase. The presence of these crystalline phases was confirmed by x-ray diffraction measurements. We review similar experimental data from literature of the last 33 years and two more theoretical models used to fit R(T).

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Language(s): eng - English
 Dates: 2016-08-042016-03-212017-01-242017-01-15
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevB.95.045308
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 95 (4) Sequence Number: 045308 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008