Understanding fundamental doping and stoichiometry limits in semiconductors by 
ab initio modelling

Neugebauer, Jörg

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Understanding fundamental doping and stoichiometry limits in semiconductors by ab initio modelling

Neugebauer, J. (2018). Understanding fundamental doping and stoichiometry limits in semiconductors by ab initio modelling. Talk presented at EDS 2018 Conference. Thessaloniki, Greece. 2018-06-24 - 2018-06-29.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0003-0873-3 Version Permalink: https://hdl.handle.net/21.11116/0000-0003-0874-2

Genre: Talk

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Creators:
Neugebauer, Jörg¹, Author

Affiliations:
1Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337

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Language(s): eng - English

Dates: Created: 2018-06

Publication Status: Not specified

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Title: EDS 2018 Conference

Place of Event: Thessaloniki, Greece

Start-/End Date: 2018-06-24 - 2018-06-29

Invited: Yes

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