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  THz modulation of monolayer WSe2-silicon hybrid structure and its performance after oxidation

Fang, Z., Xia, C., Li, Z., Wang, B., Huang, Y., Wang, L., et al. (2018). THz modulation of monolayer WSe2-silicon hybrid structure and its performance after oxidation. doi:10.1117/12.2502255.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0003-17BE-E Version Permalink: http://hdl.handle.net/21.11116/0000-0003-17BF-D
Genre: Conference Paper

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108261L.pdf (Publisher version), 741KB
 
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https://dx.doi.org/10.1117/12.2502255 (Publisher version)
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 Creators:
Fang, Z.1, Author
Xia, C.1, Author
Li, Z.2, Author              
Wang, B.3, Author
Huang, Y.3, Author
Wang, L.3, Author
Wu, X.1, Author
Affiliations:
1Beihang Univ. (China) , ou_persistent22              
2Miller Group, Atomically Resolved Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938288              
3Institute of Physics (China) , ou_persistent22              

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Free keywords: all-optical; modulation; 2D material; mono-layer WSe2; oxidation; interface state; direct bandgap
 Abstract: In recent years, THz modulators have been improved by 2D materials, yet facing a conflict between the demand for high modulation depth and the limitation of low pump power. Previously, by pumping continuous-wave laser on a highresistivity silicon wafer, we achieved modulation depth >95% in 0.3-1.5 THz, demanding continuous-wave pump power of 11.8 W. In this work, we added a mono-layer WSe2 on the high-resistivity silicon wafer by mechanical exfoliation, raising the modulation depth of THz pulse from 20% to 58% under 0.05 W femtosecond laser pump. The modulation depth can be further enhanced by raising pump power. The modulation behavior is most significant from 1.3 THz to >1.5 THz. This modulation enhancement is due to the interface state between WSe2 and silicon, as well as the direct bandgap of mono-layer WSe2. If exposed to the air, WSe2 starts oxidization at a low exciting power of <1 mW. Experiments shows that even if WSe2 is partly oxidized to WO3, the modulation depth is only slightly weakened, yet still better than the bare silicon substrate. Also, even if WSe2 does not fully cover the range of THz wave, or if the pump laser beam does not fully cover the range of THz wave, the modulation enhancement is also partly effective. Our work suggests a lowcost way to improve the efficiency of all-optical THz modulators.

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Language(s): eng - English
 Dates: 20182018
 Publication Status: Published in print
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 Rev. Method: Internal
 Identifiers: DOI: 10.1117/12.2502255
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Title: Conference on Infrared, Millimeter-Wave, and Terahertz Technologies V
Place of Event: Beijing, PEOPLES R CHINA
Start-/End Date: 2018-10-11 - 2018-10-13

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Title: Proceedings of SPIE
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Pages: - Volume / Issue: 10826 Sequence Number: - Start / End Page: - Identifier: -

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Title: INFRARED, MILLIMETER-WAVE, AND TERAHERTZ TECHNOLOGIES V
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Publ. Info: SPIE-INT SOC OPTICAL ENGINEERING
Pages: - Volume / Issue: - Sequence Number: UNSP 108261L Start / End Page: - Identifier: -