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  Transition to the quantum hall regime in InAs nanowire cross-junctions

Gooth, J., Borg, M., Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., et al. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology, 34(3): 035028, pp. 1-9. doi:10.1088/1361-6641/ab0591.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0003-3102-3 Version Permalink: http://hdl.handle.net/21.11116/0000-0003-310A-B
Genre: Journal Article

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 Creators:
Gooth, Johannes1, Author              
Borg, Mattias2, Author
Schmid, Heinz2, Author
Bologna, Nicolas2, Author
Rossell, Marta D.2, Author
Wirths, Stephan2, Author
Moselund, Kirsten2, Author
Nielsch, Kornelius2, Author
Riel, Heike2, Author
Affiliations:
1Nanostructured Quantum Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_3018212              
2External Organizations, ou_persistent22              

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 Abstract: We present a low-temperature electrical transport study on four-terminal ballistic InAs nanowire cross junctions in magnetic fields aligned perpendicular to the cross-plane. Two-terminal longitudinal conductance measurements between opposing contact terminals reveal typical 1D conductance quantization at zero magnetic field. As the magnetic field is applied, the 1D bands evolve into hybrid magneto-electric sub-levels that eventually transform into Landau levels for the widest nanowire devices investigated (width = 100 nm). Hall measurements in a four-terminal configuration on these devices show plateaus in the transverse Hall resistance at high magnetic fields that scale with (ve(2)/h)(-1). e is the elementary charge, h denotes Planck's constant and v is an integer that coincides with the Landau level index determined from the longitudinal conductance measurements. While the 1D conductance quantization in zero magnetic field is fragile against disorder at the NW surface, the plateaus in the Hall resistance at high fields remain robust as expected for a topologically protected Quantum Hall phase.

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Language(s): eng - English
 Dates: 2019-02-252019-02-25
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000459741300001
DOI: 10.1088/1361-6641/ab0591
 Degree: -

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Title: Semiconductor Science and Technology
  Other : Semicond. Sci. Technol.
Source Genre: Journal
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Publ. Info: London? : IOP Pub.
Pages: - Volume / Issue: 34 (3) Sequence Number: 035028 Start / End Page: 1 - 9 Identifier: ISSN: 0268-1242
CoNE: https://pure.mpg.de/cone/journals/resource/954925500147