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  Modulation of the Work Function by the Atomic Structure of Strong Organic Electron Acceptors on H‐Si(111)

Wang, H., Levchenko, S. V., Schultz, T., Koch, N., Scheffler, M., & Rossi, M. (2019). Modulation of the Work Function by the Atomic Structure of Strong Organic Electron Acceptors on H‐Si(111). Advanced Electronic Materials, 5(5): 1800891. doi:10.1002/aelm.201800891.

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1811.00037.pdf (Preprint), 2MB
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1811.00037.pdf
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arXiv:1811.00037v2 [cond-mat.mtrl-sci]
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 Creators:
Wang, Haiyuan1, Author           
Levchenko, Sergey V.1, 2, 3, Author           
Schultz, Thorsten4, Author
Koch, Norbert4, Author
Scheffler, Matthias1, Author           
Rossi, Mariana1, Author           
Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547              
2Center for Energy Science and Technology, Skolkovo Institute of Science and Technology, Moscow, 143026 Russia, ou_persistent22              
3Laboratory for Modeling and Development of New Materials, National University of Science and Technology “MISIS”, Moscow, 119049 Russia, ou_persistent22              
4Institut für Physik & IRIS Adlershof, Humboldt‐Universität zu Berlin, Berlin, 12489, Germany, ou_persistent22              

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 Abstract: Advances in hybrid organic/inorganic architectures for optoelectronics can be achieved by understanding how the atomic and electronic degrees of freedom cooperate or compete to yield the desired functional properties. Here, how work function changes are modulated by the structure of the organic components in model hybrid systems is shown. Two cyano‐quinodimethane derivatives (F4‐TCNQ and F6‐TCNNQ), which are strong electron‐acceptor molecules, adsorbed on H‐Si(111) are considered. From systematic structure searches employing the range‐separated hybrid HSE06 functional including many‐body van der Waals (vdW) contributions, it is predicted that, despite their similar composition, these molecules adsorb with significantly different densely packed geometries in the first layer, due to strong intermolecular interaction. F6‐TCNNQ shows a much stronger intralayer interaction (primarily due to vdW contributions) than F4‐TCNQ in multilayered structures. The densely packed geometries induce a large interface‐charge rearrangement that results in a work function increase of 1.11 and 1.76 eV for F4‐TCNQ and F6‐TCNNQ, respectively. Nuclear fluctuations at room temperature produce a wide distribution of work function values, well‐modeled by a normal distribution with σ = 0.17 eV. These findings are corroborated with experimental evidence of pronounced island formation for F6‐TCNNQ on H‐Si(111) and with the agreement of trends between predicted and measured work function changes.

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Language(s): eng - English
 Dates: 2019-02-172018-12-042019-03-18
 Publication Status: Published online
 Pages: 11
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1002/aelm.201800891
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Title: Advanced Electronic Materials
  Abbreviation : Adv. Electron. Mater.
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: 11 Volume / Issue: 5 (5) Sequence Number: 1800891 Start / End Page: - Identifier: ISSN: 2199-160X
CoNE: https://pure.mpg.de/cone/journals/resource/2199-160X