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  The Opposite Anisotropic Piezoresistive Effect of ReS2

An, C., Xu, Z., Shen, W., Zhang, R., Sun, Z., Tang, S., et al. (2019). The Opposite Anisotropic Piezoresistive Effect of ReS2. ACS Nano, 13(3), 3310-3319. doi:10.1021/acsnano.8b09161.

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 Creators:
An, Chunhua1, Author              
Xu, Zhihao1, Author              
Shen, Wanfu1, Author              
Zhang, Rongjie1, Author              
Sun, Zhaoyang1, Author              
Tang, Shuijing2, Author              
Xiao, Yunfeng2, Author              
Zhang, Daihua1, Author              
Sun, Dong3, Author              
Hu, Xiaodong1, Author              
Hu, Chunguang1, Author              
Yang, Lei4, 5, Author              
Liu, Jing1, Author              
Affiliations:
1State Key Laboratory of Precision Measuring Technology and Instrument, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, 92 Weijin Road, Tianjin, 300072, China, ou_persistent22              
2State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University Collaborative, Beijing, 100871, China, ou_persistent22              
3International Center for Quantum Materials, School of Physics, Peking University, NO. 5 Yiheyuan Road, Beijing, 100871, China, ou_persistent22              
4Atomistic Modelling, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863350              
5WPI Nano Life Science Institute (WPI-NanoLSI), Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan, ou_persistent22              

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Free keywords: Anisotropy; Electronic properties; Reflection; Rhenium compounds, Difference spectroscopy; Human Machine Interface; Low-dimensional materials; Piezoresistive effects; Reflectance difference spectroscopy; Reflectance differences; ReS2; Theoretical calculations, Sulfur compounds
 Abstract: Mechanical strain induced changes in the electronic properties of two-dimensional (2D) materials is of great interest for both fundamental studies and practical applications. The anisotropic 2D materials may further exhibit different electronic changes when the strain is applied along different crystalline axes. The resulting anisotropic piezoresistive phenomenon not only reveals distinct lattice-electron interaction along different principle axes in low-dimensional materials but also can accurately sense/recognize multidimensional strain signals for the development of strain sensors, electronic skin, human-machine interfaces, etc. In this work, we systematically studied the piezoresistive effect of an anisotropic 2D material of rhenium disulfide (ReS 2 ), which has large anisotropic ratio. The measurement of ReS 2 piezoresistance was experimentally performed on the devices fabricated on a flexible substrate with electrical channels made along the two principle axes, which were identified noninvasively by the reflectance difference microscopy developed in our lab. The result indicated that ReS 2 had completely opposite (positive and negative) piezoresistance along two principle axes, which differed from any previously reported anisotropic piezoresistive effect in other 2D materials. We attributed the opposite anisotropic piezoresistive effect of ReS 2 to the strain-induced broadening and narrowing of the bandgap along two principle axes, respectively, which was demonstrated by both reflectance difference spectroscopy and theoretical calculations. © 2019 American Chemical Society.

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Language(s): eng - English
 Dates: 2019-03-06
 Publication Status: Published in print
 Pages: -
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 Rev. Type: -
 Identifiers: DOI: 10.1021/acsnano.8b09161
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Title: ACS Nano
  Other : ACS Nano
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 13 (3) Sequence Number: - Start / End Page: 3310 - 3319 Identifier: ISSN: 1936-0851
CoNE: https://pure.mpg.de/cone/journals/resource/1936-0851