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  Thermal and nonthermal melting of III-V compound semiconductors

Medvedev, N., Fang, Z., Xia, C., & Li, Z. (2019). Thermal and nonthermal melting of III-V compound semiconductors. Physical Review B, 99(14): 144101. doi:10.1103/PhysRevB.99.144101.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0003-819F-8 Version Permalink: http://hdl.handle.net/21.11116/0000-0003-81A0-5
Genre: Journal Article

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PhysRevB.99.144101.pdf (Publisher version), 2MB
 
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https://dx.doi.org/10.1103/PhysRevB.99.144101 (Publisher version)
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 Creators:
Medvedev, N.1, 2, Author
Fang, Z.3, Author
Xia, C.4, Author
Li, Z.5, 6, Author              
Affiliations:
1Institute of Plasma Physics CAS, v.v.i., ou_persistent22              
2Institute of Physics CAS, v.v.i., ou_persistent22              
3School of Electronic and Information Engineering, Beihang University, ou_persistent22              
4School of Automation Science and Electrical Engineering, Beihang University, ou_persistent22              
5Center for Free Electron Laser Science at DESY, ou_persistent22              
6Miller Group, Atomically Resolved Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938288              

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 Abstract: We study theoretically the response of group III-V compound semiconductors (AlAs, AlP, GaAs, GaP, GaSb) to free-electron laser irradiation, identifying their damage thresholds. The employed hybrid code XTANT is capable of modeling both thermal and nonthermal effects under ultrafast electronic excitation. It allowed us to reveal common trends in the studied materials: all but the AlAs III-V compounds studied here exhibit a phase transition into a metallic disordered state of lower density than the solid phase via a thermal phase transition. This transition is instigated by electron-ion coupling at doses below the nonthermal melting. Irradiated AlAs showed two possible phases produced: low-density and high-density liquid. We demonstrate that the transferrable tight-binding method within the Born-Oppenheimer approximation significantly overestimates the damage threshold predicting only nonthermal melting in comparison to a non-Born-Oppenheimer scheme, which accounts for both effects and their interplay.

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Language(s): eng - English
 Dates: 2019-01-022019-04-102019-04-10
 Publication Status: Published in print
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 Rev. Method: Peer
 Identifiers: DOI: 10.1103/PhysRevB.99.144101
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Project name : Partial financial support from the Czech Ministry of Education, Youth and Sports (Grants No. LTT17015 and No. LM2015083) is acknowledged by N.M.
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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 99 (14) Sequence Number: 144101 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008