English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Pressure tuning of the electrical transport properties in the Weyl semimetal TaP

Besser, M., dos Reis, R. D., Fan, F.-R., Ajeesh, M. O., Sun, Y., Schmidt, M., et al. (2019). Pressure tuning of the electrical transport properties in the Weyl semimetal TaP. Physical Review Materials, 3(4): 044201, pp. 1-6. doi:10.1103/PhysRevMaterials.3.044201.

Item is

Basic

show hide
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Besser, M.1, Author              
dos Reis, R. D.1, Author              
Fan, F.-R.2, Author              
Ajeesh, M. O.1, Author              
Sun, Y.2, Author              
Schmidt, M.3, Author              
Felser, C.4, Author              
Nicklas, M.5, Author              
Affiliations:
1Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863462              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Marcus Schmidt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863415              
4Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              
5Michael Nicklas, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863472              

Content

show
hide
Free keywords: -
 Abstract: We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall and longitudinal conductivity data in a two-band model revealed an only weak decrease in the electron and hole charge-carrier densities up to 1.2 GPa, while the mobilities are essentially pressure independent along the a direction of the tetragonal crystal structure. Only weak changes in the SdH frequencies for B parallel to a and B parallel to c point at a robust Fermi-surface topology. In contrast to the stability of the Fermi-surface topology and of the density of charge carriers, our results evidence a strong pressure variation of the magnitude of transverse magnetoresistance for B parallel to a contrary to the results for B parallel to c. We can relate the former to an increase in the charge-carrier mobilities along the crystallographic c direction.

Details

show
hide
Language(s): eng - English
 Dates: 2019-04-102019-04-10
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Physical Review Materials
  Abbreviation : Phys. Rev. Mat.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: College Park, MD : American Physical Society
Pages: - Volume / Issue: 3 (4) Sequence Number: 044201 Start / End Page: 1 - 6 Identifier: ISSN: 2475-9953
CoNE: https://pure.mpg.de/cone/journals/resource/2475-9953