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  All Electrical Access to Topological Transport Features in Mn1.8PtSn Films

Schlitz, R., Swekis, P., Markou, A., Reichlova, H., Lammel, M., Gayles, J., et al. (2019). All Electrical Access to Topological Transport Features in Mn1.8PtSn Films. Nano Letters, 19(4), 2366-2370. doi:10.1021/acs.nanolett.8b05042.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0003-8C9C-0 Version Permalink: http://hdl.handle.net/21.11116/0000-0003-D36E-4
Genre: Journal Article

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 Creators:
Schlitz, Richard1, Author
Swekis, Peter2, Author              
Markou, Anastasios2, Author              
Reichlova, Helena1, Author
Lammel, Michaela1, Author
Gayles, Jacob2, Author              
Thomas, Andy1, Author
Nielsch, Kornelius1, Author
Felser, Claudia3, Author              
Goennenwein, Sebastian T. B.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: The presence of nontrivial magnetic topology can give rise to nonvanishing scalar spin chirality and consequently a topological Hall or Nernst effect. In turn, topological transport signals can serve as indicators for topological spin structures. This is particularly important in thin films or nanopatterned materials where the spin structure is not readily accessible. Conventionally, the topological response is determined by combining magnetotransport data with an independent magnetometry experiment. This approach is prone to introduce measurement artifacts. In this study, we report the observation of large topological Hall and Nernst effects in micropatterned thin films of Mn1.8PtSn below the spin reorientation temperature T-SR approximate to 190 K. The magnitude of the topological Hall effect rho(T)(xy) = 8 n Omega m is close to the value reported in bulk Mn2PtSn, and the topological Nernst effect S-xy(T) = 115 nV K-1 measured in the same microstructure has a similar magnitude as reported for bulk MnGe (S-xy(T) similar to 150 nV K-1), the only other material where a topological Nernst was reported. We use our data as a model system to introduce a topological quantity, which allows one to detect the presence of topological transport effects without the need for independent magnetometry data. Our approach thus enables the study of topological transport also in nanopatterned materials without detrimental magnetization related limitations.

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Language(s): eng - English
 Dates: 2019-03-072019-03-07
 Publication Status: Published in print
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 Table of Contents: -
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Title: Nano Letters
  Abbreviation : Nano Lett.
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 19 (4) Sequence Number: - Start / End Page: 2366 - 2370 Identifier: ISSN: 1530-6984
CoNE: https://pure.mpg.de/cone/journals/resource/110978984570403