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  Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

Wang, L., Xu, X., Zhang, L., Qiao, R., Wu, M., Wang, Z., et al. (2019). Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper. Nature, 570(7759), 91-95. doi:10.1038/s41586-019-1226-z.

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arXiv:1811.06688 [cond-mat.mtrl-sci]
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 Creators:
Wang, Li1, 2, Author
Xu, Xiaozhi1, Author
Zhang, Leining3, 4, Author
Qiao, Ruixi 1, Author
Wu, Muhong1, 5, Author
Wang, Zhichang6, Author
Zhang, Shuai7, Author
Liang, Jing1, Author
Zhang, Zhihong1, Author
Zhang, Zhibin1, Author
Chen, Wang8, Author
Xie, Xuedong8, Author
Zong, Junyu8, Author
Shan, Yuwei9, Author
Guo, Yi1, Author
Willinger, Marc Georg10, 11, Author              
Wu, Hui12, Author
Li, Qunyang7, Author
Wang, Wenlong2, Author
Gao, Peng6, 13, Author
Wu, Shiwei9, AuthorZhang, Yi8, 14, AuthorJiang, Ying6, 15, AuthorYu, Dapeng16, AuthorWang, Enge5, 17, AuthorBai, Xuedong2, AuthorWang, Zhu-Jun10, 11, Author              Ding, Feng3, 4, AuthorLiu, Kaihui1, Author more..
Affiliations:
1State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, China, ou_persistent22              
2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China, ou_persistent22              
3Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, South Korea, ou_persistent22              
4School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, South Korea, ou_persistent22              
5Songshan Lake Laboratory for Materials Science, Dongguan, China, ou_persistent22              
6International Center for Quantum Materials, School of Physics, Peking University, Beijing, China, ou_persistent22              
7Department of Engineering Mechanics, State Key Laboratory of Tribology, Tsinghua University, Beijing, China, ou_persistent22              
8National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing, China, ou_persistent22              
9State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Physics, Fudan University, Shanghai, China, ou_persistent22              
10Scientific Center for Optical and Electron Microscopy, ETH Zürich, 8093 Zürich, Switzerland, ou_persistent22              
11Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              
12State Key Laboratory of New Ceramics, Fine Processing School of Materials Science and Engineering, Tsinghua University, Beijing, China, ou_persistent22              
13Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China, ou_persistent22              
14Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China, ou_persistent22              
15Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, China, ou_persistent22              
16Shenzhen Key Laboratory of Quantum Science and Engineering, Department of Physics, South University of Science and Technology of China, Shenzhen, China, ou_persistent22              
17Physical Science Laboratory, Huairou National Comprehensive Science Center, Beijing, China, ou_persistent22              

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 Abstract: The development of two-dimensional (2D) materials has opened up possibilities for their application in electronics, optoelectronics and photovoltaics, because they can provide devices with smaller size, higher speed and additional functionalities compared with conventional silicon-based devices1. The ability to grow large, high-quality single crystals for 2D components—that is, conductors, semiconductors and insulators—is essential for the industrial application of 2D devices2-4. Atom-layered hexagonal boron nitride (hBN), with its excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator5-12. However, the size of 2D hBN single crystals is typically limited to less than one millimetre13-18, mainly because of difficulties in the growth of such crystals; these include excessive nucleation, which precludes growth from a single nucleus to large single crystals, and the threefold symmetry of the hBN lattice, which leads to antiparallel domains and twin boundaries on most substrates19. Here we report the epitaxial growth of a 100-square-centimetre single-crystal hBN monolayer on a low-symmetry Cu (110) vicinal surface, obtained by annealing an industrial copper foil. Structural characterizations and theoretical calculations indicate that epitaxial growth was achieved by the coupling of Cu <211> step edges with hBN zigzag edges, which breaks the equivalence of antiparallel hBN domains, enabling unidirectional domain alignment better than 99 per cent. The growth kinetics, unidirectional alignment and seamless stitching of the hBN domains are unambiguously demonstrated using centimetre- to atomic-scale characterization techniques. Our findings are expected to facilitate the wide application of 2D devices and lead to the epitaxial growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides20-23, to produce large single crystals.

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Language(s): eng - English
 Dates: 2018-10-222019-03-282018-05-222019-06-06
 Publication Status: Published in print
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1038/s41586-019-1226-z
 Degree: -

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Title: Nature
  Abbreviation : Nature
Source Genre: Journal
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Publ. Info: London : Nature Publishing Group
Pages: 5 Volume / Issue: 570 (7759) Sequence Number: - Start / End Page: 91 - 95 Identifier: ISSN: 0028-0836
CoNE: https://pure.mpg.de/cone/journals/resource/954925427238