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  Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb

Synoradzki, K., Ciesielski, K., Veremchuk, I., Borrmann, H., Skokowski, P., Szymański, D., et al. (2019). Thermal and Electronic Transport Properties of the Half-Heusler Phase ScNiSb. Materials, 12(10): 1723, pp. 1-11. doi:10.3390/ma12101723.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0003-E09E-E Version Permalink: http://hdl.handle.net/21.11116/0000-0003-E0A7-3
Genre: Journal Article

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Synoradzki, Karol1, Author
Ciesielski, Kamil1, Author
Veremchuk, Igor2, Author              
Borrmann, Horst3, Author              
Skokowski, Przemysław1, Author
Szymański, Damian1, Author
Grin, Yuri4, Author              
Kaczorowski, Dariusz1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Igor Veremchuk, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863411              
3Horst Borrmann, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863410              
4Juri Grin, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863413              

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 Abstract: Thermoelectric properties of the half-Heusler phase ScNiSb (space group F3m) were studied on a polycrystalline single-phase sample obtained by arc-melting and spark-plasma-sintering techniques. Measurements of the thermopower, electrical resistivity, and thermal conductivity were performed in the wide temperature range 2-950 K. The material appeared as a p-type conductor, with a fairly large, positive Seebeck coefficient of about 240 V K-1 near 450 K. Nevertheless, the measured electrical resistivity values were relatively high (83 m at 350 K), resulting in a rather small magnitude of the power factor (less than 1 x 10(-3) W m(-1) K-2) in the temperature range examined. Furthermore, the thermal conductivity was high, with a local minimum of about 6 W m(-1) K-1 occurring near 600 K. As a result, the dimensionless thermoelectric figure of merit showed a maximum of 0.1 at 810 K. This work suggests that ScNiSb could be a promising base compound for obtaining thermoelectric materials for energy conversion at high temperatures.

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Language(s): eng - English
 Dates: 2019-05-272019-05-27
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.3390/ma12101723
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Title: Materials
  Abbreviation : Materials
Source Genre: Journal
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Publ. Info: Basel : MDPI
Pages: - Volume / Issue: 12 (10) Sequence Number: 1723 Start / End Page: 1 - 11 Identifier: ISSN: 1996-1944
CoNE: https://pure.mpg.de/cone/journals/resource/1996-1944