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  Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn3Ir thin films

Taylor, J. M., Lesne, E., Markou, A., Dejene, F. K., Ernst, B., Kalache, A., et al. (2019). Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn3Ir thin films. Physical Review Materials, 3(7): 074409, pp. 1-12. doi:10.1103/PhysRevMaterials.3.074409.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0004-728E-C Version Permalink: http://hdl.handle.net/21.11116/0000-0004-7412-5
Genre: Journal Article

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 Creators:
Taylor, James M.1, Author
Lesne, Edouard1, Author
Markou, Anastasios2, Author              
Dejene, Fasil Kidane1, Author
Ernst, Benedikt2, Author              
Kalache, Adel2, Author              
Rana, Kumari Gaurav1, Author
Kumar, Neeraj1, Author
Werner, Peter1, Author
Felser, Claudia3, Author              
Parkin, Stuart S. P.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the noncollinear antiferromagnet Mn3Ir. Using epitaxial engineering on MgO (001) and Al2O3 (0001) single-crystal substrates, we control the growth of cubic gamma-Mn3Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 0.115 erg cm(-2) or 11.5 nJ cm(-2)) measured in Mn3Ir (111)/Permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn3Ir (001)/Permalloy bilayers is observed. These findings are discussed in the context of antiferromagnetic domain structures, and will inform progress towards chiral antiferromagnetic spintronic devices.

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Language(s): eng - English
 Dates: 2019-07-302019-07-30
 Publication Status: Published in print
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Title: Physical Review Materials
  Abbreviation : Phys. Rev. Mat.
Source Genre: Journal
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Publ. Info: College Park, MD : American Physical Society
Pages: - Volume / Issue: 3 (7) Sequence Number: 074409 Start / End Page: 1 - 12 Identifier: ISSN: 2475-9953
CoNE: https://pure.mpg.de/cone/journals/resource/2475-9953