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  Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2

Baskakov, A. O., Ogarkova, Y. L., Lyubutin, I. S., Starchikov, S. S., Ksenofontov, V., Shylin I, S., et al. (2019). Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2. Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 109(8), 547-551.

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 Creators:
Baskakov, A. O.1, Author
Ogarkova, Yu. L.1, Author
Lyubutin, I. S.1, Author
Starchikov, S. S.1, Author
Ksenofontov, V1, Author
Shylin I, S.1, Author
Kroitor, D.1, Author
Tsurkan, V1, Author
Medvedev, S. A.2, Author           
Naumov, P. G.3, Author           
Affiliations:
1External Organizations, ou_persistent22              
2Sergiy Medvediev, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863438              
3Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              

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 Abstract: The transport and magnetic properties of the Rb0.8Fe1.6S2 crystal have been studied under quasihydrostatic compression to a pressure of 40.5 GPa in diamond anvil cells. A semiconductor-semimetal electronic transition has been detected at a pressure of about 15 GPa. In addition, the disappearance of the magnetic order down to a temperature of 3 K has been found at a pressure of 24 GPa. It has been shown that, in contrast to a similar selenium compound Rb0.8Fe1.6Se2, superconductivity in Rb0.8Fe1.6S2 sulfide does not appear down to the lowest temperatures even at an external pressure of 40.5 GPa.

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Language(s): rus - Russian
 Dates: 2019-04-252019-04-25
 Publication Status: Issued
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Title: Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki
Source Genre: Journal
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Publ. Info: Moskau : Akademija Nauk SSSR
Pages: - Volume / Issue: 109 (8) Sequence Number: - Start / End Page: 547 - 551 Identifier: -