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  Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu–In–Te Systems

Ren, T., Han, Z., Ying, P., Li, X., Li, X., Lin, X., et al. (2019). Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu–In–Te Systems. ACS Applied Materials and Interfaces, 11(35), 32192-32199. doi:10.1021/acsami.9b12256.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0004-8C8E-F Version Permalink: http://hdl.handle.net/21.11116/0000-0004-B649-D
Genre: Journal Article

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 Creators:
Ren, Ting1, 2, Author
Han, Zhongkang3, Author
Ying, Pengzhan2, Author
Li, Xie1, Author
Li, Xiaoyan3, Author
Lin, Xinyi4, Author
Sarker, Debalaya5, Author              
Cui, Jiaolin1, Author
Affiliations:
1School of Materials and Chemical Engineering, Ningbo University of Technology, Ningbo 315211, China, ou_persistent22              
2School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, China, ou_persistent22              
3Division of Interfacial Water and Key laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201800, China, ou_persistent22              
4Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States, ou_persistent22              
5Theory, Fritz Haber Institute, Max Planck Society, ou_634547              

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 Abstract: Thermoelectric materials are of imperative need on account of the worldwide energy crisis. However, their efficiency is limited by the interplay of high electrical and lower thermal conductivities, that is, the figure of merit (ZT). Owing to their unique crystal structures, Cu–In–Te-based chalcogenides are suitable for both and thus have attracted much attention recently as potential thermoelectrics. Here we explore a newly developed Cu–In–Te derivative compound Cu3.52In4.16Te8. With a proper adjustment of Cu2Te doping, this material shows an ultralow lattice thermal conductivity (κL) (0.3 WK–1m–1) and, consequently, a figure of merit (ZT) as high as 1.65(±0.15) at 815 K: the highest value reported for p-type Cu–In–Te to date. The reduction in κL is directly related to the alteration of local symmetry around the interstitial Te, resulting in an effectively optimized phonon transport through localized “rattling” of the same. Although the Hall carrier concentration reduces upon Cu2Te addition due to the unpinning of the Fermi level (EFermi) toward the conduction band minimum, the power factor remains stable. The knowledge depicted here not only demonstrates the potential of Cu3.52In4.16Te8-based alloys as a promising TE, but also provides guidelines for developing further high-performance thermoelectric materials by enhancing the electronic conductivity.

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Language(s): eng - English
 Dates: 2019-07-122019-08-142019-08-232019-09-04
 Publication Status: Published in print
 Pages: 8
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1021/acsami.9b12256
 Degree: -

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Title: ACS Applied Materials and Interfaces
  Abbreviation : ACS Appl. Mater. Interfaces
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: 8 Volume / Issue: 11 (35) Sequence Number: - Start / End Page: 32192 - 32199 Identifier: ISSN: 1944-8244
CoNE: https://pure.mpg.de/cone/journals/resource/1944-8244