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  Formation of graphene atop a Si adlayer on the C-face of SiC

Li, J., Wang, Q., He, G., Widom, M., Nemec, L., Blum, V., et al. (2019). Formation of graphene atop a Si adlayer on the C-face of SiC. Physical Review Materials, 3(8): 084006. doi:10.1103/PhysRevMaterials.3.084006.

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PhysRevMaterials.3.084006.pdf (Publisher version), 2MB
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 Creators:
Li, Jun1, Author
Wang, Qingxiao2, Author
He, Guowei1, Author
Widom, Michael1, Author
Nemec, Lydia3, Author              
Blum, Volker4, Author
Kim, Moon2, Author
Rinke, Patrick3, 5, Author              
Feenstra, Randall M.1, Author
Affiliations:
1Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA, ou_persistent22              
2Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA, ou_persistent22              
3Theory, Fritz Haber Institute, Max Planck Society, ou_634547              
4Duke University, MEMS Department, Durham, NC 27708, USA, ou_persistent22              
5Department of Applied Physics, Aalto University, P.O. Box 11100, Aalto FI-00076, Finland, ou_persistent22              

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 Abstract: The structure of the SiC(000̅1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6). Various surface reconstructions are observed, both with and without the presence of an overlying graphene layer (which spontaneously forms at sufficiently high temperatures). Based on cross-sectional scanning transmission electron microscopy measurements, the interface structure that forms in the presence of the graphene is found to contain 1.4–1.7 monolayers (ML) of Si, a somewhat counter-intuitive result since, when the graphene forms, the system is actually under C-rich conditions. Using ab initio thermodynamics, it is demonstrated that there exists a class of Si-rich surfaces containing about 1.3 ML of Si that are stable on the surface (even under C-rich conditions) at temperatures above ∼400 K. The structures that thus form consist of Si adatoms atop a Si adlayer on the C-face of SiC, with or without the presence of overlying graphene.

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Language(s): eng - English
 Dates: 2019-05-202019-08-19
 Publication Status: Published online
 Pages: 12
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevMaterials.3.084006
 Degree: -

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Title: Physical Review Materials
  Abbreviation : Phys. Rev. Mat.
Source Genre: Journal
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Publ. Info: College Park, MD : American Physical Society
Pages: 12 Volume / Issue: 3 (8) Sequence Number: 084006 Start / End Page: - Identifier: ISSN: 2475-9953
CoNE: https://pure.mpg.de/cone/journals/resource/2475-9953