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  Thickness dependence of the anomalous Hall effect in thin films of the topological semimetal Co2MnGa

Markou, A., Kriegner, D., Gayles, J., Zhang, L., Chen, Y.-C., Ernst, B., et al. (2019). Thickness dependence of the anomalous Hall effect in thin films of the topological semimetal Co2MnGa. Physical Review B, 100(5): 054422, pp. 1-7. doi:10.1103/PhysRevB.100.054422.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0004-A771-0 Version Permalink: http://hdl.handle.net/21.11116/0000-0004-A773-E
Genre: Journal Article

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 Creators:
Markou, Anastasios1, Author              
Kriegner, Dominik1, Author              
Gayles, Jacob1, Author              
Zhang, Liguo1, Author              
Chen, Yi-Cheng1, Author              
Ernst, Benedikt1, Author              
Lai, Yu-Hong2, Author
Schnelle, Walter3, Author              
Chu, Ying-Hao2, Author
Sun, Yan1, Author              
Felser, Claudia4, Author              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2External Organizations, ou_persistent22              
3Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441              
4Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co2MnGa films from thin (20 nm) to bulklike behavior (80 nm) in order to understand the underlying mechanisms and the role of topology. The magnetron sputtered Co2MnGa films are L2(1)-ordered showing very good heteroepitaxy and a strain-induced tetragonal distortion. The anomalous Hall conductivity was found to be maximum at a value of 1138 S/cm, with a corresponding anomalous Hall angle of 13%, which is comparatively larger than topologically trivial metals. There is good agreement between the theoretical calculations and the Hall conductivity observed for the 80 nm film, which suggests that the effect is intrinsic. Thus, the Co2MnGa compound manifests as a promising material for topologically driven spintronic applications.

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Language(s): eng - English
 Dates: 2019-08-192019-08-19
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.1103/PhysRevB.100.054422
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 100 (5) Sequence Number: 054422 Start / End Page: 1 - 7 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008