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  Transport properties of topologically non-trivial bismuth tellurobromides BinTeBr

Pabst, F., Hobbis, D., Alzahrani, N., Wang, H., Rusinov, I. P., Chulkov, E. V., et al. (2019). Transport properties of topologically non-trivial bismuth tellurobromides BinTeBr. Journal of Applied Physics, 105105, pp. 1-9. doi:10.1063/1.5116369.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0004-BD4A-5 Version Permalink: http://hdl.handle.net/21.11116/0000-0004-BE42-C
Genre: Journal Article

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 Creators:
Pabst, Falk1, Author
Hobbis, Dean1, Author
Alzahrani, Noha1, Author
Wang, Hsin1, Author
Rusinov, I. P.1, Author
Chulkov, E. V.1, Author
Martin, Joshua1, Author
Ruck, Michael2, Author              
Nolas, George S.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Michael Ruck, Max Planck Fellow, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863444              

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Free keywords: Ball milling, Bromine compounds, Chemical bonds, Crystal structure, Electronic structure, Semiconducting bismuth compounds, Semiconducting tellurium compounds, Semiconductor doping, Thermal conductivity, Chemical bondings, Electron pockets, Metallic conduction, Polycrystalline specimen, Temperature dependent, Thermal measurements, Thermoelectric application, Thermoelectric properties, Bismuth compounds
 Abstract: Temperature-dependent transport properties of the recently discovered layered bismuth-rich tellurobromides BinTeBr (n = 2, 3) are investigated for the first time. Dense homogeneous polycrystalline specimens prepared for different electrical and thermal measurements were synthesized by a ball milling-based process. While the calculated electronic structure classifies Bi2TeBr as a semimetal with a small electron pocket, its transport properties demonstrate a semiconductorlike behavior. Additional bismuth bilayers in the Bi3TeBr crystal structure strengthens the interlayer chemical bonding thus leading to metallic conduction. The thermal conductivity of the semiconducting compositions is low, and the electrical properties are sensitive to doping with a factor of four reduction in resistivity observed at room temperature for only 3% Pb doping. Investigation of the thermoelectric properties suggests that optimization for thermoelectrics may depend on particular elemental substitution. The results presented are intended to expand on the research into tellurohalides in order to further advance the fundamental investigation of these materials, as well as investigate their potential for thermoelectric applications. © 2019 Author(s).

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Language(s): eng - English
 Dates: 2019-09-012019-09-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.1063/1.5116369
 Degree: -

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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: - Volume / Issue: - Sequence Number: 105105 Start / End Page: 1 - 9 Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880