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  Depth profile investigation of β-FeSi2 formed in Si (100) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing

Lakshantha, W. J., Kummari, V. C., Reinert, T., McDaniel, F. D., & Rout, B. (2014). Depth profile investigation of β-FeSi2 formed in Si (100) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 332, 33-36. doi:10.1016/j.nimb.2014.02.024.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0004-CDE7-1 Version Permalink: http://hdl.handle.net/21.11116/0000-0004-CDE8-0
Genre: Journal Article

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 Creators:
Lakshantha, Wickramaarachchige J.1, Author
Kummari, Venkata C.1, Author
Reinert, Tilo1, Author              
McDaniel, Floyd D.1, Author
Rout, Bibhudutta1, 2, Author
Affiliations:
1Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, Denton, TX , ou_persistent22              
2Center for Advanced Research and Technology, University of North Texas, Denton, TX , ou_persistent22              

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Free keywords: Ion implantation; β-FeSi2; T-DYN; TRIM; RBS
 Abstract: A single phase polycrystalline β-FeSi2 layer has been synthesized at the near surface region by implantation in Si(1 0 0) of a high fluence (∼1017 atoms/cm2) of 50 keV Fe ions and subsequent thermal annealing in vacuum at 800 °C. The depth profile of the implanted Fe atoms in Si(1 0 0) were simulated by the widely used transportation of ions in matter (TRIM) computer code as well as by the dynamic transportation of ions in matter code (T-DYN). The simulated depth profile predictions for this heavy ion implantation process were experimentally verified using Rutherford Backscattering Spectrometry (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with Ar-ion etching. The formation of the β-FeSi2 phase was monitored by X-ray diffraction measurements. The T-DYN simulations show better agreement with the experimental Fe depth profile results than the static TRIM simulations. The experimental and T-DYN simulated results show an asymmetric distribution of Fe concentrated more toward the surface region of the Si substrate.

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Language(s): eng - English
 Dates: 2014-03-272014-08-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1016/j.nimb.2014.02.024
BibTex Citekey: Lakshantha:2014
 Degree: -

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Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  Abbreviation : NIM B
Source Genre: Journal
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Publ. Info: Amsterdam : Elsevier B.V.
Pages: - Volume / Issue: 332 Sequence Number: - Start / End Page: 33 - 36 Identifier: ISSN: 0168-583X
CoNE: https://pure.mpg.de/cone/journals/resource/954925484704