English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Characterization of defects in n-type 4̑extitH-SiC after high-energy N ion implantation by RBS-channeling and Raman spectroscopy

Kummari, V. C., Reinert, T., Jiang, W., McDaniel, F. D., & Rout, B. (2014). Characterization of defects in n-type 4̑extitH-SiC after high-energy N ion implantation by RBS-channeling and Raman spectroscopy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 332, 28-32. doi:10.1016/j.nimb.2014.02.023.

Item is

Basic

show hide
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Kummari, Venkata C.1, Author
Reinert, Tilo1, Author              
Jiang, Weilin2, Author
McDaniel, Floyd D.1, Author
Rout, Bibhudutta1, 3, Author
Affiliations:
1Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, Denton, TX , ou_persistent22              
2Pacific Northwest National Laboratory, Richland, WA, ou_persistent22              
3Center for Advanced Research and Technology, University of North Texas, Denton, TX , ou_persistent22              

Content

show
hide
Free keywords: n-Type 4H-SiC; Ion implantation; RBS; Channeling; Raman spectroscopy
 Abstract: Implantation with 1 MeV N ions was performed at room temperature in n-type 4H-SiC (0 0 0 1) at four implantation fluences (or doses in dpa (displacements per atom) at the damage peak) of 1.5 × 1013 (0.0034), 7.8 × 1013 (0.018), 1.5 × 1014 (0.034), and 7.8 × 1014 (0.178) ions/cm2, respectively. The evolution of disorder was studied using Rutherford backscattering spectrometry in channeling mode (RBS-C), Raman spectroscopy, and optical transmission. The disorder in the Si sub-lattice was found to be less than 10% for the dpa of 0.0034 and 0.0178 and increased to 40% and 60% for the dpa of 0.034 and 0.178 respectively. The normalized Raman intensity In, shows disorder of 41%, 69%, 77% and 100% for the dpa of 0.0034, 0.0178, 0.034 and 0.178, respectively. In this paper, the characterization of the defects produced due to the nitrogen implantation in 4H-SiC are presented and the results are discussed.

Details

show
hide
Language(s): eng - English
 Dates: 2014-03-242014-08-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1016/j.nimb.2014.02.023
BibTex Citekey: Kummari:2014
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  Abbreviation : NIM B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Amsterdam : Elsevier B.V.
Pages: - Volume / Issue: 332 Sequence Number: - Start / End Page: 28 - 32 Identifier: ISSN: 0168-583X
CoNE: https://pure.mpg.de/cone/journals/resource/954925484704