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  Large resistivity reduction in mixed-valent CsAuBr3 under pressure

Naumov, P., Huangfu, S., Wu, X., Schilling, A., Thomale, R., Felser, C., et al. (2019). Large resistivity reduction in mixed-valent CsAuBr3 under pressure. Physical Review B, 100(15): 155113, pp. 1-8. doi:10.1103/PhysRevB.100.155113.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0005-1B80-C Version Permalink: http://hdl.handle.net/21.11116/0000-0005-1B83-9
Genre: Journal Article

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Naumov, Pavel1, Author              
Huangfu, Shangxiong2, Author
Wu, Xianxin2, Author
Schilling, Andreas2, Author
Thomale, Ronny2, Author
Felser, Claudia3, Author              
Medvedev, Sergey4, Author              
Jeschke, Harald O.2, Author
von Rohr, Fabian O.2, Author
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2External Organizations, ou_persistent22              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              
4Sergiy Medvediev, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863438              

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 Abstract: We report on high-pressure p <= 45 GPa resistivity measurements on the perovskite-related mixed-valent compound CsAuBr3. The compounds high-pressure resistivity can be classified into three regions: For low pressures (p < 10 GPa) an insulator to metal transition is observed; between p = 10 GPa and 14 GPa the room temperature resistivity goes through a minimum and increases again; and above p = 14 GPa a semiconducting state is observed. From this pressure up to the highest pressure of p = 45 GPa reached in this experiment, the room-temperature resistivity remains nearly constant. We find an extremely large resistivity reduction between ambient pressure and 10 GPa by more than six orders of magnitude. This decrease is among the largest reported changes in the resistivity for this narrow pressure regime. We show-by an analysis of the electronic band structure evolution of this material-that the large change in resistivity under pressure in not caused by a crossing of the bands at the Fermi level. We find that it instead stems from two bands that are pinned at the Fermi level and that are moving toward one another as a consequence of the mixed-valent to single-valent transition. This mechanism appears to be especially effective for the rapid buildup of the density of states at the Fermi level.

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Language(s): eng - English
 Dates: 2019-10-072019-10-07
 Publication Status: Published in print
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 Table of Contents: -
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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 100 (15) Sequence Number: 155113 Start / End Page: 1 - 8 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008