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  Room temperature strain-induced Landau levels in graphene on a wafer-scale platform

Nigge, P., Qu, A., Lantagne-Hurtubise, É., Mårsell, E., Link, S., Tom, G., et al. (2019). Room temperature strain-induced Landau levels in graphene on a wafer-scale platform. Science Advances, eaaw5593, pp. 1-7. doi:10.1126/sciadv.aaw5593.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0005-4DC0-C Version Permalink: http://hdl.handle.net/21.11116/0000-0005-4DC2-A
Genre: Journal Article

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 Creators:
Nigge, P.1, Author
Qu, A.C.1, Author
Lantagne-Hurtubise, É.1, Author
Mårsell, E.1, Author
Link, S.1, Author
Tom, G.1, Author
Zonno, M.1, Author
Michiardi, M.2, Author              
Schneider, M.1, Author
Zhdanovich, S.1, Author
Levy, G.1, Author
Starke, U.1, Author
Gutiérrez, C.1, Author
Bonn, D.1, Author
Burke, S.A.1, Author
Franz, M.1, Author
Damascelli, A.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              

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Free keywords: Photoelectron spectroscopy, Scanning tunneling microscopy, Silicon carbide, Silicon compounds, Angle resolved photoemission spectroscopy, Engineering methods, Micrometer scale, Model calculations, New applications, Quantum phenomena, Transport measurements, Triangular nanoprisms, Graphene
 Abstract: Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T, enabling the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications. Copyright © 2019 The Authors, some rights reserved;

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Language(s): eng - English
 Dates: 2019-11-082019-11-08
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.1126/sciadv.aaw5593
 Degree: -

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Title: Science Advances
  Other : Sci. Adv.
Source Genre: Journal
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Publ. Info: Washington : AAAS
Pages: - Volume / Issue: - Sequence Number: eaaw5593 Start / End Page: 1 - 7 Identifier: ISSN: 2375-2548
CoNE: https://pure.mpg.de/cone/journals/resource/2375-2548