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  Resonant inelastic X-ray scattering investigation of the crystal-field splitting of Sm3+ in SmB6

Amorese, A., Stockert, O., Kummer, K., Brookes, N. B., Kim, D.-J., Fisk, Z., et al. (2019). Resonant inelastic X-ray scattering investigation of the crystal-field splitting of Sm3+ in SmB6. Physical Review B, 241107, pp. 1-8. doi:10.1103/PhysRevB.100.241107.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0005-6C95-A Version Permalink: http://hdl.handle.net/21.11116/0000-0005-805F-0
Genre: Journal Article

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 Creators:
Amorese, Andrea1, Author              
Stockert, Oliver1, Author              
Kummer, Kurt2, Author
Brookes, Nicholas B.2, Author
Kim, Dae-Jeong2, Author
Fisk, Zachary2, Author
Haverkort, Maurits W.2, Author
Thalmeier, Peter3, Author              
Tjeng, Liu Hao4, Author              
Severing, Andrea1, Author              
Affiliations:
1Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              
2External Organizations, ou_persistent22              
3Peter Thalmeier, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863457              
4Liu Hao Tjeng, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863452              

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 Abstract: The crystal-field (CF) splitting of the 6H5/2 Hund's rule ground state of Sm3+ in the strongly correlated topological insulator SmB6 has been determined with high-resolution resonant inelastic X-ray scattering (RIXS) at the Sm M5 edge. The valence selectivity of RIXS allows isolating the crystal-field-split excited multiplets of the Sm3+ (4f5) configuration from those of Sm2+ (4f6) in intermediate valent SmB6. We find that the quartet Γ8 ground state and the doublet Γ7 excited state are split by Δ6H5/2CF=20±10 meV which sets an upper limit for the 4f bandwidth. This indicates an extremely large mass renormalization from the band-structure value, pointing out the need to consider the coefficients of fractional parentage for the hopping of the 4f electrons. The tiny bandwidth explains the small value of the indirect gap and puts constraints on the energies of the topological surface states. © 2019 American Physical Society.

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Language(s): eng - English
 Dates: 2019-12-132019-12-13
 Publication Status: Published in print
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 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.1103/PhysRevB.100.241107
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: - Sequence Number: 241107 Start / End Page: 1 - 8 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008