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  High-Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

Disa, A., Walker, F. J., & Ahn, C. H. (2020). High-Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces. Advanced Materials Interfaces, 7(6): 1901772. doi:10.1002/admi.201901772.

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admi.201901772.pdf (Verlagsversion), 4MB
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admi.201901772.pdf
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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
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2020
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© the Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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https://dx.doi.org/10.1002/admi.201901772 (Verlagsversion)
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 Urheber:
Disa, A.1, Autor           
Walker, F. J.2, Autor
Ahn, C. H.2, Autor
Affiliations:
1Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938293              
2Department of Applied Physics and Center for Research on Interface Structures and Phenomena, Yale University, New Haven,, ou_persistent22              

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 Zusammenfassung: In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk of a crystal are contained in the intensity and position of Bragg peaks in X‐ray diffraction, CTRs carry detailed information about the atomic structure at the interface. Developments in synchrotron X‐ray sources, instrumentation, and analysis procedures have made CTR measurements into extremely powerful tools to study atomic reconstructions and relaxations occurring in a wide variety of interfacial systems, with relevance to chemical and electronic functionalities. In this review, an overview of the use of CTRs in the study of atomic structure at interfaces is provided. The basic theory, measurement, and analysis of CTRs are covered and applications from the literature are highlighted. Illustrative examples include studies of complex oxide thin films and multilayers.

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Sprache(n): eng - English
 Datum: 2020-01-212019-10-212020-02-202020-03
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: DOI: 10.1002/admi.201901772
 Art des Abschluß: -

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Projektname : A.S.D. acknowledges fellowship support from the Alexander von Humboldt Foundation. F.J.W. and C.H.A. acknowledge support for work on this review by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. DE‐SC0019211. F.J.W. also acknowledges helpful discussions over the years with Eliot Specht, Gene Ice, Cullie Sparks, Zhan Zhang, Hawoong Hong, Chris Schlepütz, Jon Tischler, and Paul Zschack. This article is part of the Advanced Materials Interfaces Hall of Fame article series, which highlights the work of top interface and surface scientists.
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Titel: Advanced Materials Interfaces
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: -
Seiten: - Band / Heft: 7 (6) Artikelnummer: 1901772 Start- / Endseite: - Identifikator: ISSN: 21967350