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  Modelling radiation damage to pixel sensors in the ATLAS detector

ATLAS Collaboration (2019). Modelling radiation damage to pixel sensors in the ATLAS detector. Journal of Instrumentation, 14, P06012. Retrieved from https://publications.mppmu.mpg.de/?action=search&mpi=MPP-2019-90.

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ATLAS Collaboration1, Author
Affiliations:
1Max Planck Institute for Physics, Max Planck Society and Cooperation Partners, ou_2253650              

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Free keywords: ATLAS
 Abstract: Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of $10^{15}$ 1 MeV ${n}_{eq}/{cm}^2$, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 ($\leq 10^{15}$ 1 MeV ${n}_{eq}/{cm}^2$).

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 Dates: 2019
 Publication Status: Issued
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Title: Journal of Instrumentation
  Abbreviation : J.Inst.
Source Genre: Journal
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Pages: - Volume / Issue: 14 Sequence Number: - Start / End Page: P06012 Identifier: -