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  The coalescence behavior of two-dimensional materials revealed by multiscale in situ imaging during chemical vapor deposition growth

Wang, Z.-J., Dong, J., Li, L., Dong, G., Cui, Y., Yang, Y., et al. (2020). The coalescence behavior of two-dimensional materials revealed by multiscale in situ imaging during chemical vapor deposition growth. ACS Nano, 14(2), 1902-1918. doi:10.1021/acsnano.9b08221.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0005-EBBE-D Version Permalink: http://hdl.handle.net/21.11116/0000-0006-9473-1
Genre: Journal Article

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 Creators:
Wang, Zhu-Jun, Author
Dong, Jichen, Author
Li, Linfei, Author
Dong, Guocai, Author
Cui, Yi, Author
Yang, Yang, Author
Wei, Wei, Author
Blume, Raoul, Author
Li, Qing, Author
Wang, Li, Author
Xu, Xiaozhi, Author
Liu, Kaihui, Author
Barroo, Cédric, Author
Frenken, Joost W. M., Author
Fu, Qiang, Author
Bao, Xinhe, Author
Schlögl, Robert, Author
Ding, Feng, Author
Willinger, Marc Georg1, Author              
Affiliations:
1Marc Willinger, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_2364728              

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Free keywords: multiscale in situ imaging, seamless coalescence, 2D materials
 Abstract: Wafer-scale monocrystalline two-dimensional (2D) materials can theoretically be grown by seamless coalescence of individual domains into a large single crystal. Here we present a concise study of the coalescence behavior of crystalline 2D films using a combination of complementary in situ methods. Direct observation of overlayer growth from the atomic to the millimeter scale and under model- and industrially relevant growth conditions reveals the influence of the film–substrate interaction on the crystallinity of the 2D film. In the case of weakly interacting substrates, the coalescence behavior is dictated by the inherent growth kinetics of the 2D film. It is shown that the merging of coaligned domains leads to a distinct modification of the growth dynamics through the formation of fast-growing high-energy edges. The latter can be traced down to a reduced kink-creation energy at the interface between well-aligned domains. In the case of strongly interacting substrates, the lattice mismatch between film and substrate induces a pronounced moiré corrugation that determines the growth and coalescence behavior. It furthermore imposes additional criteria for seamless coalescence and determines the structure of grain boundaries. The experimental findings, obtained here for the case of graphene, are confirmed by theory-based growth simulations and can be generalized to other 2D materials that show 3- or 6-fold symmetry. Based on the gained understanding of the relation between film–substrate interaction, shape evolution, and coalescence behavior, conditions for seamless coalescence and, thus, for the optimization of large-scale production of monocrystalline 2D materials are established.

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Language(s): eng - English
 Dates: 2020-02-072020
 Publication Status: Published in print
 Pages: -
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 Rev. Method: -
 Identifiers: DOI: 10.1021/acsnano.9b08221
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Title: ACS Nano
  Other : ACS Nano
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 14 (2) Sequence Number: - Start / End Page: 1902 - 1918 Identifier: ISSN: 1936-0851