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  The coalescence behavior of two-dimensional materials revealed by multiscale in situ imaging during chemical vapor deposition growth

Wang, Z.-J., Dong, J., Li, L., Dong, G., Cui, Y., Yang, Y., et al. (2020). The coalescence behavior of two-dimensional materials revealed by multiscale in situ imaging during chemical vapor deposition growth. ACS Nano, 14(2), 1902-1918. doi:10.1021/acsnano.9b08221.

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 Creators:
Wang, Zhu-Jun1, 2, Author              
Dong, Jichen3, Author
Li, Linfei4, Author
Dong, Guocai5, Author
Cui, Yi6, Author
Yang, Yang7, Author
Wei, Wei6, 7, Author
Blume, Raoul1, Author              
Li, Qing8, Author
Wang, Li9, Author
Xu, Xiaozhi9, Author
Liu, Kaihui9, Author
Barroo, Cédric10, Author
Frenken, Joost W. M.5, Author
Fu, Qiang7, Author
Bao, Xinhe7, Author
Schlögl, Robert1, Author              
Ding, Feng3, Author
Willinger, Marc Georg1, 2, 11, Author              
Affiliations:
1Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              
2Scientific Center for Optical and Electron Microscopy, ETH Zürich, 8093 Zürich, Switzerland, ou_persistent22              
3School of Materials Science and Engineering and Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea, ou_persistent22              
4Department of Chemistry, University of Illinois at Chicago, Chicago, Illinois 60607, United States, ou_persistent22              
5Kamerlingh Onnes Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden, The Netherlands, ou_persistent22              
6Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China, ou_persistent22              
7State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China, ou_persistent22              
8Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, Jiangsu, China, ou_persistent22              
9State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Centre of Quantum Matter, School of Physics, Peking University, Beijing 100871, China, ou_persistent22              
10Chemical Physics of Materials and Catalysis, Faculty of Sciences, Université Libre de Bruxelles, CP243, 1050 Brussels, Belgium, ou_persistent22              
11Department of Colloid Chemistry, Max Planck Institute of Colloids and Interfaces, Potsdam D-14424, Germany, ou_persistent22              

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 Abstract: Wafer-scale monocrystalline two-dimensional (2D) materials can theoretically be grown by seamless coalescence of individual domains into a large single crystal. Here we present a concise study of the coalescence behavior of crystalline 2D films using a combination of complementary in situ methods. Direct observation of overlayer growth from the atomic to the millimeter scale and under model- and industrially relevant growth conditions reveals the influence of the film–substrate interaction on the crystallinity of the 2D film. In the case of weakly interacting substrates, the coalescence behavior is dictated by the inherent growth kinetics of the 2D film. It is shown that the merging of coaligned domains leads to a distinct modification of the growth dynamics through the formation of fast-growing high-energy edges. The latter can be traced down to a reduced kink-creation energy at the interface between well-aligned domains. In the case of strongly interacting substrates, the lattice mismatch between film and substrate induces a pronounced moiré corrugation that determines the growth and coalescence behavior. It furthermore imposes additional criteria for seamless coalescence and determines the structure of grain boundaries. The experimental findings, obtained here for the case of graphene, are confirmed by theory-based growth simulations and can be generalized to other 2D materials that show 3- or 6-fold symmetry. Based on the gained understanding of the relation between film–substrate interaction, shape evolution, and coalescence behavior, conditions for seamless coalescence and, thus, for the optimization of large-scale production of monocrystalline 2D materials are established.

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Language(s): eng - English
 Dates: 2019-10-172020-02-072020-02-072020-02-25
 Publication Status: Published in print
 Pages: 17
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1021/acsnano.9b08221
 Degree: -

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Title: ACS Nano
  Other : ACS Nano
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: 17 Volume / Issue: 14 (2) Sequence Number: - Start / End Page: 1902 - 1918 Identifier: ISSN: 1936-0851