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  Mobility of charge carriers in self-assembled monolayers

Fu, Z., Ladnorg, T., Gliemann, H., Welle, A., Bashir, A., Rohwerder, M., et al. (2019). Mobility of charge carriers in self-assembled monolayers. Beilstein Journal of Nanotechnology, 10, 2449-2458. doi:10.3762/bjnano.10.235.

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Fu.Z_2190-4286-10-235.pdf (Verlagsversion), 4MB
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 Urheber:
Fu, Zhihua1, Autor           
Ladnorg, Tatjana1, Autor           
Gliemann, Hartmut1, Autor           
Welle, Alexander1, Autor           
Bashir, Asif2, 3, Autor           
Rohwerder, Michael2, Autor           
Zhang, Qiang1, Autor           
Schüpbach, Björn4, Autor           
Terfort, Andreas5, Autor           
Wöll, Christof H.6, Autor           
Affiliations:
1Institute of Functional Interfaces (IFG), Karlsruhe Institute ofTechnology (KIT), Campus Nord, 76344 Eggenstein-Leopoldshafen, Germany, ou_persistent22              
2Corrosion, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_2074315              
3Thyssenkrupp Bilstein GmbH, Niederkell 25, D-54429 Mandern, Germany, ou_persistent22              
4Department of Chemistry,Institute of Inorganic and Analytical Chemistry, Goethe-University, 60438 Frankfurt, Germany, ou_persistent22              
5Institute of Inorganic and Analytical Chemistry, Goethe-University, D-60438 Frankfurt, Germany, ou_persistent22              
6Karlsruhe Institute of Technology, Institute of Functional Interfaces (IFG), D-76344 Eggenstein-Leopoldshafen, Germany, ou_persistent22              

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Schlagwörter: Carrier transport; D region; Energy gap; Grain boundaries; Organic polymers; Organic semiconductor materials; Self assembled monolayers, Alkanethiolates; Conducting atomic force microscopy; Conventional methods; Electrical conductivity; IV characteristics; Macroscopic sample; Nanografting; New approaches, Carrier mobility
 Zusammenfassung: We present a new approach to study charge transport within 2D layers of organic semi-conductors (OSCs) using atomic force microscopy (AFM)-based lithography applied to self-assembled monolayers (SAMs), fabricated from appropriate organothiols. The extent of lateral charge transport was investigated by insulating pre-defined patches within OSC-based SAMs with regions of insulating SAM made from large band gap alkanethiolates. The new method is demonstrated using a phenyl-linked anthracenethiolate (PAT), 4-(anthracene-2-ylethynyl)benzyl thiolate. I-V characteristics of differently shaped PAT-islands were measured using the AFM tip as a top electrode. We were able to determine a relationship between island size and electrical conductivity, and from this dependence, we could obtain information on the lateral charge transport and charge carrier mobility within the thin OSC layers. Our study demonstrates that AFM nanografting of appropriately functionalized OSC molecules provides a suitable method to determine intrinsic mobilities of charge carriers in OSC thin films. In particular, this method is rather insensitive with regard to influence of grain boundaries and other defects, which hamper the application of conventional methods for the determination of mobilities in macroscopic samples. © 2019 Fu et al.

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Sprache(n): eng - English
 Datum: 2019-12-11
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
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 Identifikatoren: DOI: 10.3762/bjnano.10.235
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Titel: Beilstein Journal of Nanotechnology
  Kurztitel : Beilstein J. Nanotechnol.
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Frankfurt am Main : Beilstein-Institut
Seiten: - Band / Heft: 10 Artikelnummer: - Start- / Endseite: 2449 - 2458 Identifikator: ISSN: 2190-4286
CoNE: https://pure.mpg.de/cone/journals/resource/2190-4286