English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
 
 
DownloadE-Mail
  Mobility of charge carriers in self-assembled monolayers

Fu, Z., Ladnorg, T., Gliemann, H., Welle, A., Bashir, A., Rohwerder, M., et al. (2019). Mobility of charge carriers in self-assembled monolayers. Beilstein Journal of Nanotechnology, 10, 2449-2458. doi:10.3762/bjnano.10.235.

Item is

Files

show Files
hide Files
:
Fu.Z_2190-4286-10-235.pdf (Publisher version), 4MB
Name:
Fu.Z_2190-4286-10-235.pdf
Description:
Open Access
OA-Status:
Visibility:
Public
MIME-Type / Checksum:
application/pdf / [MD5]
Technical Metadata:
Copyright Date:
-
Copyright Info:
-

Locators

show

Creators

show
hide
 Creators:
Fu, Zhihua1, Author           
Ladnorg, Tatjana1, Author           
Gliemann, Hartmut1, Author           
Welle, Alexander1, Author           
Bashir, Asif2, 3, Author           
Rohwerder, Michael2, Author           
Zhang, Qiang1, Author           
Schüpbach, Björn4, Author           
Terfort, Andreas5, Author           
Wöll, Christof H.6, Author           
Affiliations:
1Institute of Functional Interfaces (IFG), Karlsruhe Institute ofTechnology (KIT), Campus Nord, 76344 Eggenstein-Leopoldshafen, Germany, ou_persistent22              
2Corrosion, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_2074315              
3Thyssenkrupp Bilstein GmbH, Niederkell 25, D-54429 Mandern, Germany, ou_persistent22              
4Department of Chemistry,Institute of Inorganic and Analytical Chemistry, Goethe-University, 60438 Frankfurt, Germany, ou_persistent22              
5Institute of Inorganic and Analytical Chemistry, Goethe-University, D-60438 Frankfurt, Germany, ou_persistent22              
6Karlsruhe Institute of Technology, Institute of Functional Interfaces (IFG), D-76344 Eggenstein-Leopoldshafen, Germany, ou_persistent22              

Content

show
hide
Free keywords: Carrier transport; D region; Energy gap; Grain boundaries; Organic polymers; Organic semiconductor materials; Self assembled monolayers, Alkanethiolates; Conducting atomic force microscopy; Conventional methods; Electrical conductivity; IV characteristics; Macroscopic sample; Nanografting; New approaches, Carrier mobility
 Abstract: We present a new approach to study charge transport within 2D layers of organic semi-conductors (OSCs) using atomic force microscopy (AFM)-based lithography applied to self-assembled monolayers (SAMs), fabricated from appropriate organothiols. The extent of lateral charge transport was investigated by insulating pre-defined patches within OSC-based SAMs with regions of insulating SAM made from large band gap alkanethiolates. The new method is demonstrated using a phenyl-linked anthracenethiolate (PAT), 4-(anthracene-2-ylethynyl)benzyl thiolate. I-V characteristics of differently shaped PAT-islands were measured using the AFM tip as a top electrode. We were able to determine a relationship between island size and electrical conductivity, and from this dependence, we could obtain information on the lateral charge transport and charge carrier mobility within the thin OSC layers. Our study demonstrates that AFM nanografting of appropriately functionalized OSC molecules provides a suitable method to determine intrinsic mobilities of charge carriers in OSC thin films. In particular, this method is rather insensitive with regard to influence of grain boundaries and other defects, which hamper the application of conventional methods for the determination of mobilities in macroscopic samples. © 2019 Fu et al.

Details

show
hide
Language(s): eng - English
 Dates: 2019-12-11
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.3762/bjnano.10.235
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Beilstein Journal of Nanotechnology
  Abbreviation : Beilstein J. Nanotechnol.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Frankfurt am Main : Beilstein-Institut
Pages: - Volume / Issue: 10 Sequence Number: - Start / End Page: 2449 - 2458 Identifier: ISSN: 2190-4286
CoNE: https://pure.mpg.de/cone/journals/resource/2190-4286