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  Analysis of charge-transfer and charge-conserving optical transitions at vanadium ions in CdTe

Selber, H., Peka, P., Biernacki, S. W., Schulz, H.-J., Schwarz, R., & Benz, K. W. (1999). Analysis of charge-transfer and charge-conserving optical transitions at vanadium ions in CdTe. Semiconductor Science and Technology, 14(6), 521-527. doi:10.1088/0268-1242/14/6/306.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0006-43A9-0 Version Permalink: https://hdl.handle.net/21.11116/0000-0006-43AB-E
Genre: Journal Article

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 Creators:
Selber, Heiko1, Author           
Peka, P.1, Author
Biernacki, S. W.2, Author
Schulz, Hans-Joachim1, Author           
Schwarz, R.3, Author
Benz, K. W.3, Author
Affiliations:
1Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              
2Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL-02-668 Warsaw, Poland, ou_persistent22              
3Kristallographisches Institut, Universität Freiburg, Hebelstr. 25, D-79104 Freiburg, Germany, ou_persistent22              

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 Abstract: In addition to the V3+ features earlier identified, photoluminescence (PL) excitation and sensitization spectra support the assignment of infrared PL bands to internal transitions of V+ and V2+ in vanadium-doped CdTe. The measured decay time constants of the PL bands conform to the electric-dipole selection rules. Crystal-field calculations applying a Tanabe-Sugano scheme support the assignment of excited states. In addition to the charge-conserving transitions of vanadium ions in their various oxidation states, charge-transfer transitions are present in the spectra. A comparative analysis of intrinsic defect levels reveals that they are not involved in the experimental spectra. From the excitation and sensitization spectra, the positions of the V/V3+ donor (ECB-7550 cm-1) and V2+/V+ acceptor (ECB-4800 cm-1) levels in CdTe are determined.

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Language(s): eng - English
 Dates: 1999-01-061998-08-111999-02-261999-06-011999-06
 Publication Status: Issued
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1088/0268-1242/14/6/306
 Degree: -

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Title: Semiconductor Science and Technology
  Other : Semicond. Sci. Technol.
Source Genre: Journal
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Publ. Info: Bristol : IOP Pub.
Pages: 7 Volume / Issue: 14 (6) Sequence Number: - Start / End Page: 521 - 527 Identifier: ISSN: 0268-1242
CoNE: https://pure.mpg.de/cone/journals/resource/954925500147