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  Micro-Scale Device—An Alternative Route for Studying the Intrinsic Properties of Solid-State Materials: The Case of Semiconducting TaGeIr

Antonyshyn, I., Wagner, F. R., Bobnar, M., Sichevych, O., Burkhardt, U., Schmidt, M., et al. (2020). Micro-Scale Device—An Alternative Route for Studying the Intrinsic Properties of Solid-State Materials: The Case of Semiconducting TaGeIr. Angewandte Chemie International Edition, 59(27), 11136-11141. doi:10.1002/anie.202002693.

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Antonyshyn, I.1, Autor           
Wagner, F. R.2, Autor           
Bobnar, M.3, Autor           
Sichevych, O.3, Autor           
Burkhardt, U.4, Autor           
Schmidt, M.5, Autor           
König, M.6, Autor           
Poeppelmeier, K.7, Autor
Mackenzie, A. P.8, Autor           
Svanidze, E.3, Autor           
Grin, Y.9, Autor           
Affiliations:
1Iryna Antonyshyn, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863412              
2Frank Wagner, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863409              
3Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863405              
4Ulrich Burkhardt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863422              
5Marcus Schmidt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863415              
6Markus König, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863470              
7External Organizations, ou_persistent22              
8Andrew Mackenzie, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863463              
9Juri Grin, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863413              

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Schlagwörter: crystal structures, electronic structure, semiconductors, solid-state structures, Ion beams, Manufacture, Alternative routes, Electronic transport, Intrinsic property, Physical and chemical properties, Secondary phasis, Semiconducting behavior, Solid-state materials, Synthesis route, Impurities
 Zusammenfassung: An efficient application of a material is only possible if we know its physical and chemical properties, which is frequently obstructed by the presence of micro- or macroscopic inclusions of secondary phases. While sometimes a sophisticated synthesis route can address this issue, often obtaining pure material is not possible. One example is TaGeIr, which has highly sample-dependent properties resulting from the presence of several impurity phases, which influence electronic transport in the material. The effect of these minority phases was avoided by manufacturing, with the help of focused-ion-beam, a μm-scale device containing only one phase—TaGeIr. This work provides evidence for intrinsic semiconducting behavior of TaGeIr and serves as an example of selective single-domain device manufacturing. This approach gives a unique access to the properties of compounds that cannot be synthesized in single-phase form, sparing costly and time-consuming synthesis efforts. © 2020 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

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Sprache(n): eng - English
 Datum: 2020-05-012020-05-01
 Publikationsstatus: Erschienen
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 Identifikatoren: DOI: 10.1002/anie.202002693
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Titel: Angewandte Chemie International Edition
  Kurztitel : Angew. Chem., Int. Ed.
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Weinheim : Wiley-VCH
Seiten: - Band / Heft: 59 (27) Artikelnummer: - Start- / Endseite: 11136 - 11141 Identifikator: ISSN: 1433-7851
CoNE: https://pure.mpg.de/cone/journals/resource/1433-7851