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  Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator

Anwar, S., Jeong, B., Abolhasani, M. M., Zajaczkowski, W., Hassanpour Amiri, M., & Asadi, K. (2020). Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator. Journal of Materials Chemistry C, 8(16), 5535-5540. doi:10.1039/c9tc06868f.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0006-651E-8 Version Permalink: http://hdl.handle.net/21.11116/0000-0006-651F-7
Genre: Journal Article

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c9tc06868f.pdf (Publisher version), 3MB
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c9tc06868f.pdf
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Copyright Date:
2020
Copyright Info:
The Royal Society of Chemistry

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 Creators:
Anwar, Saleem1, 2, 3, Author              
Jeong, Beomjin1, 2, Author              
Abolhasani, Mohammad Mahdi1, 2, 4, Author              
Zajaczkowski, Wojciech1, Author              
Hassanpour Amiri, Morteza1, 2, Author              
Asadi, Kamal2, Author              
Affiliations:
1Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society, ou_1800284              
2Humboldt Research Group Asadi: Organic/Inorganic Hybrids, MPI for Polymer Research, Max Planck Society, ou_2243638              
3Nat Univ Sci & Technol, Sch Chem & Mat Engn, Islamabad, Pakistan, ou_persistent22              
4Chemical Engineering Department, University of Kashan, Kashan, Iran, ou_persistent22              

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Language(s): eng - English
 Dates: 2020-04-282020
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.1039/c9tc06868f
 Degree: -

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Title: Journal of Materials Chemistry C
  Other : Journal of Materials Chemistry C: Materials for Optical and Electronic Devices
  Abbreviation : J. Mater. Chem. C
Source Genre: Journal
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Publ. Info: London, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 8 (16) Sequence Number: - Start / End Page: 5535 - 5540 Identifier: ISSN: 2050-7526
CoNE: https://pure.mpg.de/cone/journals/resource/2050-7526