English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Doping Effects in CMOS-compatible CoSi Thin Films for Thermoelectric and Sensor Applications

Krishna Nichenametla, C., Calvo, J., Riedel, S., Gerlich, L., Hindenberg, M., Novikov, S., et al. (2020). Doping Effects in CMOS-compatible CoSi Thin Films for Thermoelectric and Sensor Applications. Zeitschrift für anorganische und allgemeine Chemie, 646(14), 1231-1237. doi:10.1002/zaac.202000084.

Item is

Basic

show hide
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Krishna Nichenametla, Charan1, Author
Calvo, Jesus1, Author
Riedel, Stefan1, Author
Gerlich, Lukas1, Author
Hindenberg, Meike1, Author
Novikov, Sergej1, Author
Burkov, Alexander1, Author
Kozelj, Primož2, Author              
Cardoso-Gil, Raul3, Author              
Wagner-Reetz, Maik1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863405              
3Raul Cardoso, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863420              

Content

show
hide
Free keywords: CMOS, Cobalt, CoSi, Silicidation, Silicides, Thermoelectric materials
 Abstract: Abstract. We report on semi-metallic cobalt monosilicide (CoSi) as a CMOS-compatible thermoelectric (TE) material and discuss the effect of n- and p-type dopants on its transport properties. Thin films of CoSi are developed using chemical vapor deposition tools and subsequent rapid thermal processing. Film properties such as microstructure, crystallinity and elemental distribution are studied via electron microscopy, X-ray diffraction and time-of-flight secondary ion mass spectroscopy. Doping silicon with boron prior to silicidation impedes the Co-Si diffusion process, while phosphorus atoms distribute uniformly in silicides with no voids or agglomerations. CoSi makes a suitable n-type TE candidate and provides an alternative to Si or SiGe materials. Transport properties of undoped CoSi exhibit a linear dependence within the investigated temperature window, whereas dopants in CoSi increase the number of electron carriers that contribute to charge transport and thereby influence the Seebeck coefficient. Thus, TE characteristics of thin CoSi films can be tuned via (i) the type of dopants used and/or (ii) varying the residual silicon thickness post silicidation. © 2020 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Details

show
hide
Language(s): eng - English
 Dates: 2020-06-102020-06-10
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1002/zaac.202000084
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Zeitschrift für anorganische und allgemeine Chemie
  Other : J. Inorg. Gen Chem.
  Other : Journal of Inorganic and General Chemistry
  Abbreviation : Z. Anorg. Allg. Chem.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Leipzig, Weinheim : Verlag Johann Ambrosius Barth / Wiley-VCH
Pages: - Volume / Issue: 646 (14) Sequence Number: - Start / End Page: 1231 - 1237 Identifier: Other: 1521-3749
ISSN: 0044-2313
CoNE: https://pure.mpg.de/cone/journals/resource/954925453895